Finite element modeling of ion-beam lithography masks for pattern transfer distortions

Frisque, Gary A.; Tejeda, R.; Lovell, Edward G.; Engelstad, Roxann L.

doi:10.1117/12.351145

Cited by 16 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The last factor is mainly determined by the performance of an EB writer, but also affected by pattern displacement due to the gradient of pattern density. 8,9,10 The basic strategy to comply with the budget is to use the fine deflectors for the correction of the global IP error to allocate as much the budget as possible to the local IP error. …”

Section: Overlay Budget For Arf-pel Mix-and-match Lithographymentioning

confidence: 99%

Feedforward correction of mask image placement for proximity electron lithography

et al. 2004

View full text Add to dashboard Cite

A production-compatible method for the correction of image-placement (IP) error over a 1x stencil mask as used for proximity electron lithography (PEL) has been demonstrated. The mask IP error as measured using a newly developed metrology tool was fed forward to the PEL stepper, LEEPL-3000 and corrected for via the fine deflection of the electron beam. The overlay errors with respect to the substrate patterned by the ArF scanner have decreased from 63.6/59.3 nm to 26.1/36.4 nm in the x/y directions, but they are still larger than the errors of 15.2/14.8 nm for the conventional feedback method. Therefore, some improvements in the metrology method, the mask chucking method, the mask flatness and so on are required.

show abstract

Section: Overlay Budget For Arf-pel Mix-and-match Lithographymentioning

confidence: 99%

Feedforward correction of mask image placement for proximity electron lithography

et al. 2004

View full text Add to dashboard Cite

show abstract

“…Pattern distortion which is the maximum deformation caused by pattern distribution has been calculated by finite element method (FEM) simulations [6][7][8][9][10].…”

Section: Image Placementmentioning

confidence: 99%

The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies

Koike¹,

Sakaue²,

Arimoto³

et al. 2005

SPIE Proceedings

View full text Add to dashboard Cite

Electron projection lithography (EPL) is one of the most promising candidates for the next generation lithography toward the hp 45 nm-node and beyond. EPL employs a stencil mask made from 200 mm Si wafer without a support frame, therefore chucking of an EPL tool and a metrology tool causes deformation in an EPL reticle. However, linear components of sub-field (SF) position error can be corrected by reticle alignment features of an EPL tool, whereas the non-linear components of SF position error can be corrected where each SF is measured beforehand and the corresponding reticle distortion correction (RDC) data is fed into the EPL exposure tool. The SF position error can be viewed as inter-SF IP error where it can be affected by the repeatability of measurement and by the repeatability of distortions caused by the chucking of the measurement tool and the EPL tool. The other part of inter-SF IP comes from the residual that relates to global IP. Besides inter-SF IP, intra-SF IP can be divided into "local IP" and "pattern distribution". For our studies we have investigated the measurement repeatability of the metrology tool (Nikon XY-6i), distortion repeatabilities caused by the chucking of the metrology tool and the EPL tool (NSR-EB1A), global and local IPs, and pattern distortion. Currently we find the effect of mask IP on wafer scale is less than 9 nm, and we believe that in the near future the EPL mask IP target for the hp 45 nm-node could be realized.

show abstract

Modeling pattern transfer in ion-beam lithography masks

Frisque

Tejeda

Engelstad

et al. 2000

Microelectronic Engineering

View full text Add to dashboard Cite

Finite element modeling of ion-beam lithography masks for pattern transfer distortions

Cited by 16 publications

References 10 publications

Feedforward correction of mask image placement for proximity electron lithography

Feedforward correction of mask image placement for proximity electron lithography

The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies

Modeling pattern transfer in ion-beam lithography masks

Contact Info

Product

Resources

About