FINFET operational amplifier with low offset noise and high immunity to electromagnetic interference

Kumar, Vivek; Muruganandham, A.; Selvaraj, Ratnam J.; Ganesh, N. S. Gowri

doi:10.1016/j.micpro.2019.102887

Cited by 6 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Senthilkumer et al [107] proposed a design of an operational amplifier using a FinFET device to reduce electromagnetic interference (EMI). The proposed structure added a low-pass filter to remove noise signals.…”

Section: Non-ideal Effects On Finfetmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

View full text Add to dashboard Cite

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

show abstract

Section: Non-ideal Effects On Finfetmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

View full text Add to dashboard Cite

show abstract

FinFET‐based power‐efficient, low leakage, and area‐efficient DWT lifting architecture using power gating and reversible logic

Palanisamy

Ramachandran²

2020

Circuit Theory & Apps

View full text Add to dashboard Cite

SummaryFor ultra‐low‐power applications, the computing components are smaller in size and consume less energy. In nonstationary signal analysis, the transformation plays an important role. Out of different transformation techniques, the most famous and dominant architecture is the discrete wavelet transform. The building block of the architecture should be optimized by all parameters. In this paper, the optimization was done on the power reduction and leakage current reduction. A new FinFET‐based lifting‐based wavelet architecture was proposed. Power gating and reversible logic methodology are proposed for the FinFET‐based transform to reduce the dynamic power by about 30%. The proposed FinFET‐based processing elements were utilized in the various blocks of the lifting‐based DWT architecture. The implementation was done in 32‐nm CMOS and FinFET technology. From the results, it has been investigated that the FinFET‐based circuits are efficient when compared with CMOS technology. This is due to the second‐order effects happening in CMOS circuits below 45 nm. The proposed design consumes less area and low leakage current and power when compared with the CMOS technology. Future trends of using multigate devices below 14 nm technology are presented finally.

show abstract