Film Thickness Dependence of Dielectric Property and Crystal Structure of PbTiO₃ Film Prepared on Pt/SiO₂/Si Substrate by Metal Organic Chemical Vapor Deposition

Abstract

A comprehensive analysis of gened relativistic spacetimes which admit a shearfree, irrotational and geodesic time-like coogruence is presented. The equations governing the models for a gened energy-momentum tensor are wrilten down. Coordinates in which the metric of such spacetimes takes on a simplified form are established. The general subwses of 'zero anisotropic stress', 'zero heat-flux vector' and 'two-component Ruids' are investigated. In particular, perfect-fluid Friedmann-Robertson-Walker models and spatially homogeneous models are discussed. Models with a variety of physically relevant energy-momentum tensors are considered. Anisowopic fluid models and viscous fluid models with heat conduction are examined. Also. models with B perfect Ruid plus a magnetic field or with pure radiation. and models with two non-collinw perfect fluids (satisfying a variety of physical conditions) are inwtigated. In particular. models with a (single) perfect Ruid which is tilting with respect to the shem-free, vorticity-free and acceleration-free time-like congruence are discussed.PACS numbers: 0420J. 9880H

Thermodynamic theory of stress distribution in epitaxial Pb(Zr, Ti)O3 thin films

“…[1][2][3][4] This thickness dependence is more pronounced in epitaxially grown thin films. Funakubo and co-workers 3 experimentally demonstrated that the lattice parameters and dielectric susceptibilities of epitaxially grown PbTiO 3 thin films were increasingly dependent on the film thickness with decreasing total thickness.…”

Thickness dependence of the dielectric function of ferroelectric thin films

“…The changes of dielectric properties, such as dielectric constant, remanent polarization and coercive field with film thickness has been reported for PbðZr; TiÞO 3 (PZT) [11,12], PbTiO 3 [13], BaTiO 3 [6], and ðBa; SrÞTiO 3 (BST) [9,10] thin films by many groups. The low frequency dielectric permitivity measurements were peformed on the KH 2 PO 4 (KDP) nanosize particle systems.…”

Processing of dielectric nanocube 3D-assemblies and their high electrical properties for next-generation devices

“…Low dielectric constant layers were easily generated by small mismatches of the lattice parameter and thermal expansion properties between the film material and substrate. 4),5) The thickness of this layer was reported as about 200 nm. As a result, the dielectric constant of the film decreases with decreases in film thickness.…”

“…A low dielectric constant layer appears near the interfaces between the film and substrate. 4), 5) This phenomenon is known as the thickness effect of dielectric thin films. On the other hand, there are some reports that the interfaces of the dielectric nanoparticles and thin films have increased their ferroelectric and dielectric properties.…”