Film growth studies with intrinsic stress measurement: Polycrystalline and epitaxial Ag, Cu, and Au films on mica(001)

Winau, D.; Koch, R.; Fuhrmann, André; Rieder, K. H.

doi:10.1063/1.349313

Cited by 75 publications

(32 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Extensive in situ thin film stress state studies [7][8][9][10][11][12][13][14] have been performed during the deposition of various single elemental films. It has been revealed that high adatom mobility films like Cu 10,12 and Ag 7-10 usually undergo compressiveto-tensile-to-compressive stress evolution corresponding to the nucleation of islands, coalescence of islands, and postgrowth stages.…”

Section: Introductionmentioning

confidence: 99%

Compositional dependent thin film stress states

Thompson

2010

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inStructure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering J. Appl. Phys. 113, 213504 (2013); 10.1063/1.4808240 Effect of adatom surface diffusivity on microstructure and intrinsic stress evolutions during Ag film growth J. Appl. Phys. 112, 043503 (2012); 10.1063/1.4746739 Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure J. Appl. Phys. 111, 083520 (2012); 10.1063/1.4704683Effect of initial stress/strain state on order-disorder transformation of FePt thin films This paper addresses in situ stress evolution of two-component Fe x Pt 1−x , where x spanned 0 to 1, alloy thin films. The stresses of the high-temperature, quenched-in, solid solution phase was determined by in situ wafer curvature measurements during ambient temperature growth. The measured stresses were shown to be compositional dependent and spanned both compressive and tensile stress states. Under specific growth conditions, a "zero-stress" state could be achieved. The alloy stress states did not show any significant stress recovery upon ceasing the deposition, i.e. the stress state during growth was retained in the film. X-ray diffraction, transmission electron microscopy, and atom probe tomography were used to characterize the microstructures of each thin film. The evolution of the stress state with composition is described in terms of a chemical potential term for preferential segregation of one species in the alloy to the grain boundaries.

show abstract

Section: Introductionmentioning

confidence: 99%

Compositional dependent thin film stress states

Thompson

2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…After the tensile stress is decreased to its minimum and the c-axis lattice constant of FST is close to its bulk value, the tensile stress can increase again with further increasing the buffer thickness. This behavior can be attributed to complex dependence of strain on the film thickness by taking the Volmer-Weber growth mode and strain relaxation mechanism into account [24][25][26][27][28][29][30]. For a metal or metallic compound, a typical behavior is that the magnitude of strain can change non-monotoically with film thickness, usually a large tensile strain appears.…”

Section: Resultsmentioning

confidence: 99%

Linear correlation between the c-axis lattice constant and superconducting critical temperature in FeSe_0.5Te_0.5 thin films

Zhang

Xing

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

Using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electrical resistance analyses, we investigate structural and superconducting properties of FeSe 0.5 Te 0.5 films deposited by pulsed laser deposition on TiO 2 -buffered (CeO 2 -buffered) SrTiO 3 substrates with the buffer film thickness varying from 0 to several tens of nanometers. It is found that the SrTiO 3 /TiO 2 (or CeO 2 )/FeSe 0.5 Te 0.5 film in a proper thickness range of the buffer film shows a higher superconducting transition temperature (T c ) than the SrTiO 3 /FeSe 0.5 Te 0.5 film without buffer layer, indicating that the buffer layer can enhance T c . Both T c and the c-axis lattice constant of FeSe 0.5 Te 0.5 films increase first and then decrease with the buffer film thickness, each exhibiting its maximum at a particular buffer film thickness, and both of them show an almost linear correlation.

show abstract

“…As changes of stress are directly related to the relief of misfit-strain, quantitative information on the reduction of the elastic energy by 3D islanding is obtained. Its temperature dependence points to the presence of ESBs (Ehrlich-Schwoebel barriers) [16], which are enhanced by the strain field, thus supporting a kinetic pathway for nucleation and growth of the 3D islands.The experiments were performed in a UHV chamber (base pressure , 1 3 10 210 mbar) equipped with a cantilever beam device for measuring the intrinsic film stress continuously during film deposition and a four-grid LEED optics for in situ control of the epitaxial film quality [17]. …”

mentioning

confidence: 99%

“…The experiments were performed in a UHV chamber (base pressure , 1 3 10 210 mbar) equipped with a cantilever beam device for measuring the intrinsic film stress continuously during film deposition and a four-grid LEED optics for in situ control of the epitaxial film quality [17].…”

mentioning

confidence: 99%

Stress and Relief of Misfit Strain of Ge/Si(001)

et al. 1998

Self Cite

View full text Add to dashboard Cite

The intrinsic stress of the Stranski-Krastanov system Ge͞Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic pathway for 3D islanding.[S0031-9007 (98)05549-5] PACS numbers: 68.55.Jk, 68.60.Bs, 81.15.HiThe growth of Ge on Si substrates has attracted considerable interest in the past because of their importance for the fabrication of optoelectronic devices (based, e.g., on strained-layer superlattices or uniform quantum-dot arrays) as well as of Si-based high speed transistors in GeSi alloys. On Si(001) film growth proceeds by SK (StranskiKrastanov) mode, i.e., 3D islands nucleate on top of a several ML (monolayer) thick wetting layer. At temperatures below 800 K the initial 3D islands preferentially are small square pyramids with ͕105͖ facets [1-5], which due to their regular shapes were named as "hut" clusters [1]. At higher temperatures larger ("macroscopic") islands with more complex facet structures are formed [1,6,7]. Interestingly, up to lateral dimensions as large as 100 nm the 3D islands of Ge grow coherent on the substrate, i.e., dislocation free [6,8]. Analogous growth behavior has also been observed in other strained systems (e.g., [9]).By now it is still discussed controversially, why the growth of Ge͞Si(001) as well as of SK systems, in general, suddenly switches from 2D to 3D. The prevailing explanation is based primarily on energetic arguments [10]. Because of the larger unit cell dimensions of Ge a pseudomorphic layer on Si (001) is compressed by about 4.1%, which according to bulk elasticity gives rise to misfit stress of 26.0 GPa. In the pseudomorphic growth stage the elastic energy therefore increases linearly with thickness and destabilizes the film. Compressive stress of 25.65 GPa indeed was observed in the wetting layer by Schell-Sorokin and Tromp [11] at 770 K. As predicted by the thermodynamic models and confirmed recently by x-ray diffraction [12], the 3D islands partially relax the misfit strain because upper layers are free to adjust their interatomic distances to the respective equilibrium values. According to these models the driving force for 3D islanding is the reduction of the elastic energy which compensates the additional cost of free surface energy [10]. In addition to the thermodynamic explanation there is increasing evidence for kinetic processes to be involved in the process of 3D islanding. For instance, Mo et al. [1] speculated that the hut clusters represent a metastable intermediate state for the formation of macroscopic islands. Various studies emphasize the importance of the misfit strain field, which may influence nucleation and growth of the 3D islands [1,13] and suppress their coalescence [14] or f...

show abstract

Film growth studies with intrinsic stress measurement: Polycrystalline and epitaxial Ag, Cu, and Au films on mica(001)

Cited by 75 publications

References 30 publications

Compositional dependent thin film stress states

Compositional dependent thin film stress states

Linear correlation between the c-axis lattice constant and superconducting critical temperature in FeSe_0.5Te_0.5 thin films

Stress and Relief of Misfit Strain of Ge/Si(001)

Contact Info

Product

Resources

About

Film growth studies with intrinsic stress measurement: Polycrystalline and epitaxial Ag, Cu, and Au films on mica(001)

Cited by 75 publications

References 30 publications

Compositional dependent thin film stress states

Compositional dependent thin film stress states

Linear correlation between the c-axis lattice constant and superconducting critical temperature in FeSe0.5Te0.5 thin films

Stress and Relief of Misfit Strain of Ge/Si(001)

Contact Info

Product

Resources

About

Linear correlation between the c-axis lattice constant and superconducting critical temperature in FeSe_0.5Te_0.5 thin films