Abstract:With the miniaturization and integration of electronic devices, the heat dissipation problems caused by higher power density are getting more serious, limiting the development of integrated circuits industry. Graphene, as a representative of two-dimensional materials, has attracted extensive attention for its excellent thermal properties. Ever since it has been discovered, researches have been carried out and achievements have been made both theoretically and practically. Here, we review the established theori… Show more
“…[32] In 2D electronic and optoelectronic devices with single-atom thickness, the heat production in the confined volume will always result in local hotspots which are becoming crucial for high-power-density chips because the enhanced local temperature causes degradation in the lifespan of devices. [33] Therefore, the thermal conductivities of 2D materials have attracted extensive attention in recent years. [34,35] Great effort has been done to understand the various effects on thermal transport properties of 2D materials, including size effect, [36] strain effect, [37] defect effect, [38] and substrate dependence.…”
2D Janus transition metal dichalcogenide (TMD) semiconductor materials have attracted great interest for their potential applications. Because of the increased requirement for thermal management in 2D devices with single‐atom thickness, a fundamental understanding of interfacial thermal conduction (ITC) has emerging significance. In this work, the ITC of in‐plane heterostructures constructed using MoSSe and WSSe is reported. In addition to the interface connected normally by MoSSe and WSSe with the same type of chalcogen atoms are on the same side of left and right sections, inversional interface by rotation of 180° of WSSe is also considered, in which S atoms are on the opposite side of the left and right sections. Interestingly, the ITC in the normally connected heterostructure is found to be almost twice as much as that in the inversely connected heterostructure. The unusually large change in ITC is attributed to the bending curvature and additional discontinuity in the inversely connected heterostructure. Euler–Bernoulli beam model gives further insight into the origin of such interface bending. The findings offer the very first insight into the phonon transport in Janus heterostructures, and benefit thermal management of 2D devices based on Janus monolayers.
“…[32] In 2D electronic and optoelectronic devices with single-atom thickness, the heat production in the confined volume will always result in local hotspots which are becoming crucial for high-power-density chips because the enhanced local temperature causes degradation in the lifespan of devices. [33] Therefore, the thermal conductivities of 2D materials have attracted extensive attention in recent years. [34,35] Great effort has been done to understand the various effects on thermal transport properties of 2D materials, including size effect, [36] strain effect, [37] defect effect, [38] and substrate dependence.…”
2D Janus transition metal dichalcogenide (TMD) semiconductor materials have attracted great interest for their potential applications. Because of the increased requirement for thermal management in 2D devices with single‐atom thickness, a fundamental understanding of interfacial thermal conduction (ITC) has emerging significance. In this work, the ITC of in‐plane heterostructures constructed using MoSSe and WSSe is reported. In addition to the interface connected normally by MoSSe and WSSe with the same type of chalcogen atoms are on the same side of left and right sections, inversional interface by rotation of 180° of WSSe is also considered, in which S atoms are on the opposite side of the left and right sections. Interestingly, the ITC in the normally connected heterostructure is found to be almost twice as much as that in the inversely connected heterostructure. The unusually large change in ITC is attributed to the bending curvature and additional discontinuity in the inversely connected heterostructure. Euler–Bernoulli beam model gives further insight into the origin of such interface bending. The findings offer the very first insight into the phonon transport in Janus heterostructures, and benefit thermal management of 2D devices based on Janus monolayers.
“…Moreover, hBN is thermally and chemically stable, as it will not decompose at 1000 °C in air, 1400 °C in vacuum, or 2800 °C in an inert atmosphere. [ 28 ] At the same time, compared with Cu, bulk hBN has almost the same κ value (400 W m –1 K –1 ) with a lower mass density, which leads to broad application prospects in heat‐dissipation in electronic devices.…”
Section: The Development In 2d Materials For Thermal Dissipation Appl...mentioning
confidence: 99%
“…Recently, some reviews have also focused on 2D materials for thermal management. [28][29][30] For example, ref. [29] summarized graphene thermal-management materials according to different fabrication methods and discussed various characterization technologies.…”
The channel/gate length of transistors is getting close to the physical limit. [1] To meet the requirements of chip performance, advanced design technologies are utilized to bring higher Transistors are getting close to their physical limitation, and complex chip design technologies have made the hotspot problem more serious. Graphene and hBN, as representative 2D semi-metal and dielectric materials, possess excellent thermal conductivities. Intrinsic 2D materials, 2D film materials, and 2D composite materials have been investigated, showing great potential for next-generation thermal-management materials. There are products that have already been commercialized based on graphene and hBN, but many companies seem to be sitting on the fence, and the obstacles toward implementation of these materials need to be specified. Here, high thermal conductivity 2D materials from theory and engineering to applications are reviewed, aiming to provide a comprehensive summary of the current state of the art of this field in order to give an overview and future prospects in application, manufacturing, and commercialization. From the theoretical perspective, the impact factors and development path of 2D materials for thermal dissipation and the engineering aspect of structural design are presented. The prospects and challenges are also tackled, expressing an objective view about future opportunities to build 2D-based heat-dissipation systems.
“…On the one hand, different from three-dimensional bulk materials, novel thermal transport phenomena are reported in low-dimensional nanostructures, including the remarkable size dependence in thermal conductivity [1][2][3][4][5], and phonon hydrodynamics transport characteristic including second sound and phonon Poiseuille flow [6][7][8][9][10]. In addition to the importance in fundamental physics, the study of thermal conduction in nano materials is critical for applications including thermoelectrics [11,12], and thermal management in nanoscale integrated devices [13][14][15][16]. In thermal management, high thermal conductivity materials have promising application potential.…”
In the past two decades, with the rapid progress in synthesis of nanoscale materials and manufacturing of low-dimensional structures, it has created a great demand for understanding of thermal transport in nanoscale. The study of heat conduction in nanoscale is beneficial to many applications such as thermal management, thermal protection, thermoelectrics as well as phonon informatics. Here, we provide the reader with insight and an eye-opening review of the impact of atomic coating on the thermal conduction in low-dimensional structures, specially in coherent phonon regime. Typical systems including semiconducting nanowires, carbon nanotubes, two-dimension materials and nanoscale thin film have been considered. This review aims to summarize recent advances with theoretical, experimental and simulative studies toward understanding of thermal conductivity of nano materials with atomic coating. We also report the importance of the top-layer coating on the interfacial thermal conductance in twodimensional devices.
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