2010
DOI: 10.1016/j.solmat.2008.06.001
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Fill factor in organic solar cells

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Cited by 219 publications
(125 citation statements)
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“…4 in Ref. 44) show that there is a reduction in current density and increase in voltage across the active layer along the dimension x in Fig. 8.…”
Section: On the Underlying Mechanism Of The Size Effect In Opv Cellsmentioning
confidence: 82%
See 1 more Smart Citation
“…4 in Ref. 44) show that there is a reduction in current density and increase in voltage across the active layer along the dimension x in Fig. 8.…”
Section: On the Underlying Mechanism Of The Size Effect In Opv Cellsmentioning
confidence: 82%
“…44 From the shape of the J ph curve it is possible to characterize the carrier photogeneration and transport in different regimes. Indeed, the behavior of the illuminated J-V response depends on the drift length (L D ¼ msE, where m is the mobility, s is the lifetime of the charge carriers, and E is the field across the device) of the electrons (e) and holes (h) and the ratio (b) of their drift lengths (b ¼ m e s e /m h s h ).…”
Section: Light Intensity Dependence Ff: Evolution Of the Shape J Pmentioning
confidence: 99%
“…We exclude variation in anode and probe resistance, which remain constant and consider rather the contact resistances at the ITO/ZnO and ZnO/Active layer interfaces. In the former Ohmic contact was confirmed by Considering R sh which originates from the leakage currents induced by pinholes and defects in the device [40] we have measured J-V characteristics in the dark, Figure 6. There is a systematic increase in the leakage current as processing temperature is increased and it is noteworthy that the 25 °C ETL based device shows a non-zero bias at short-circuit due to carrier accumulation at the interface associated with the high resistivity of the film.…”
Section: Opv Device Performance With Etl Processing Temperature Variamentioning
confidence: 84%
“…In addition to compositional changes in the ETL that may improve the charge transport we consider changes occurring in the ITO where the measured R S increases from 11.3 Ω/⧠ in our as-received substrates to 51.7 Ω/⧠ following the same thermal treatment as applied to the 450 °C-ZnO, Supplementary Figure 4. This will contribute to the overall increase in R S which is a combination of the bulk resistance of the active layer, interlayers and electrodes, in addition to the contact resistance of every interface and the probe resistance [40] . We exclude variation in anode and probe resistance, which remain constant and consider rather the contact resistances at the ITO/ZnO and ZnO/Active layer interfaces.…”
Section: Opv Device Performance With Etl Processing Temperature Variamentioning
confidence: 99%
“…In addition, both the hole and electron mobilities usually change simultaneously, which obscures the fundamental relationship between the mobility and FF. Another aspect to consider is that there are plenty of device-related parameters, such as the active layer thickness as well as shunt-and series-resistances 4 that influence the FF of a solar cell. Thus, the data in the literature can vary very strongly for a given material system.…”
Section: Introduction a Backgroundmentioning
confidence: 99%