Filamentary Conduction in Aloe Vera Film for Memory Application

Lim, Zhe Xi; Sasidharan, Sreenivasan; Wong, Yew Hoong; Zhao, Feng; Cheong, Kuan Yew

doi:10.1016/j.proeng.2017.04.133

Cited by 24 publications

(19 citation statements)

References 30 publications

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“…If the permanent breakdown is avoided, the device can be switched at a lower voltage during the subsequent SET operation (Figure b). We have demonstrated the bipolar resistive switching using the same voltage sweeps in a preliminary study . Similar resistive switching has also been reported in a few bio‐organic devices based on silk fibroin, chitosan, and cellulose nanofiber paper …”

Section: Resultssupporting

confidence: 78%

“…The device needs to undergo an electroforming process as a prerequisite for triggering reversible switching subsequently. Similar switching behavior had also been observed when the Al top electrode (TE) was replaced with Ag as a common electrochemically active material . The results lead to association of the switching mechanism with solid‐state electrochemical processes related to the formation and dissolution of a nanoscale conductive path in the A. vera gel film.…”

Section: Introductionsupporting

confidence: 64%

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Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Lim

Cheong

2018

Adv Materials Technologies

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To enable long-term progress, next-generation nonvolatile memories should function on the basis of new concepts that are different from the conventional charge storage in floating-gate transistors. [4][5][6] Of the emerging storage principles, electrically modulated resistive switching behaviors in metal-insulator-metal (MIM) structures could be an intriguing concept to redefine the frontiers of next-generation nonvolatile memories. [7][8][9][10][11][12][13][14] Such implementation offers promising advantages in several key aspects, including down-scalability, switching speed, power consumption, and fabrication cost.Resistive switching has been demonstrated in a wide variety of inorganic [7][8][9][10] and organic [11][12][13][14] materials, which are generally deposited as a continuous thin film sandwiched in between two conductive electrodes forming a MIM structure. However, careful consideration should be taken during the fabrication process, because deposition of these materials using various power-demanding methods (e.g., thermal evaporation, molecular beam epitaxy, and chemical vapor deposition) could possibly lead to an energy-imbalance situation. [15] Furthermore, utilization of materials derived from nonrenewable resources (e.g., mined minerals and fossil fuels) could raise critical issue regarding sustainability. In general, these materials are chemically robust and thus require an infinitely long period for natural decomposition after disposal, leaving behind massive volumes of electronic waste overwhelming landfills around the world. [16] In tandem with the growing environmental awareness and the proliferation of disposable electronics, there is an urgent need to develop more electronic applications based on the greener bio-organic materials, [16,17] which are generally derived from living (or once-living) organisms that are abundant in the nature. Bio-organic materials are not only biodegradable, biocompatible, and environmentally benign to provide a sustainable solution in addressing the environmental concerns, but also exotic for next-generation electronics realization. Recently, resistive switching behaviors demonstrated in several bio-organic MIM structures (Table S1, Supporting Information) have garnered considerable attention owing to their potentials as a plausible alternative for next-generation nonvolatile memories.Growing environmental awareness has prompted a paradigm shift toward using green materials for various electronic applications. Bio-organic materials are promising candidates attributable to their inherent biocompatibility, biodegradability, and environmental friendliness. Here, a nonvolatile memory device based on resistive switching in a bio-organic polysaccharides film is presented. The polysaccharides are extracted from natural Aloe vera gel using facile alcohol precipitation. Optimal film deposition is achieved through spin-coating followed by drying at 120 °C, which is higher than the usual processing temperature of commercial Aloe vera gel. Both bipolar and unipolar resistiv...

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Section: Resultssupporting

confidence: 78%

Section: Introductionsupporting

confidence: 64%

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Lim

Cheong

2018

Adv Materials Technologies

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“…Other flexible RSDs have also been developed using other non-toxic, biocompatible, printable materials which include cellulose [ 53 ], egg albumen [ 54 ], Aloe vera film [ 55 ], silk protein [ 56 ], organic materials [ 57 , 58 , 59 ], etc.…”

Section: Biobased/biocompatible Rsds For Wmcmentioning

confidence: 99%

“…The electrical switching of the memory device at different stretching conditions were recorded ( Figure 5 ). It was observed that the device under all conditions showed a Write Once Read many Memory (WORM) behavior [ 36 , 57 ].…”

Section: Stretchable Rsdsmentioning

confidence: 99%

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing

Rajan

Garofalo

Chiolerio

2018

Sensors

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A recent trend in the development of high mass consumption electron devices is towards electronic textiles (e-textiles), smart wearable devices, smart clothes, and flexible or printable electronics. Intrinsically soft, stretchable, flexible, Wearable Memories and Computing devices (WMCs) bring us closer to sci-fi scenarios, where future electronic systems are totally integrated in our everyday outfits and help us in achieving a higher comfort level, interacting for us with other digital devices such as smartphones and domotics, or with analog devices, such as our brain/peripheral nervous system. WMC will enable each of us to contribute to open and big data systems as individual nodes, providing real-time information about physical and environmental parameters (including air pollution monitoring, sound and light pollution, chemical or radioactive fallout alert, network availability, and so on). Furthermore, WMC could be directly connected to human brain and enable extremely fast operation and unprecedented interface complexity, directly mapping the continuous states available to biological systems. This review focuses on recent advances in nanotechnology and materials science and pays particular attention to any result and promising technology to enable intrinsically soft, stretchable, flexible WMC.

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“… 4 , 18 Moreover, green synthesis of TMOs played a significant role in green electronics toward low-cost recycling of waste materials for the development of higher speed and sustainable memory devices. 19 , 20 In this study, green-synthesized titanium dioxide (TiO 2 ) mediated by a lime peel extract (LPE)-based memory cell is developed to address the sneak path current issue with the utilization of active interstitial defects or active sites followed by the ECM mechanism. These active sites or interstitial defect sites have been confirmed in many in situ measurements and other optical investigations.…”

Section: Introductionmentioning

confidence: 99%

Biomaterial-Induced Stable Resistive Switching Mechanism in TiO₂ Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

et al. 2020

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Leakage of current in oxide layers is the main issue for higher speed and denser resistive random-access memory. Defect engineering played a substantial role in meeting this challenge by doping or producing controlled interstitial defects or active sites. These controlled active sites enabled memory cells to form a stable and reproducible conduction filament following an electrochemical metallization model. In this study, a defect-abundant lime peel extract (LPE)-mediated anatase TiO 2 thin film was fabricated using a simple hydrothermal route. The detailed structural and morphological analysis of the bioactive anatase TiO 2 -LPE thin film reveals the homogeneous growth of TiO 2 flowers and distinct features in terms of controlled defects as compared to simple anatase TiO 2 . These interstitial defects (Ti +3 and Ti +4 ) behave as active sites for cation migrations along highly conductive K 1+ ions because of the mediation of LPE. The defect-free surface reveals slight surface roughness (4.8 nm) that successfully minimizes leakage of current. The strategy enabled a reliable conductive bridge filament, which can replicate with no more electric degradation. The Ag/TiO 2 -LPE/FTO-based memory cell demonstrates reproducible bipolar resistive switching along with a high ON/OFF ratio (>10 5 ), excellent endurance (1.5 × 10 3 cycles), and long-term retention (10 5 s) without any electrical degradation. Furthermore, green-synthesized TiO 2 -LPE nanoparticles have shown superior antibacterial activity as compared to other green syntheses of different plants or fruits against the toxic microorganisms present in inorganic media.

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Filamentary Conduction in Aloe Vera Film for Memory Application

Cited by 24 publications

References 30 publications

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing

Biomaterial-Induced Stable Resistive Switching Mechanism in TiO₂ Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

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Filamentary Conduction in Aloe Vera Film for Memory Application

Cited by 24 publications

References 30 publications

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing

Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

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Product

Resources

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Biomaterial-Induced Stable Resistive Switching Mechanism in TiO₂ Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity