Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films

Menon, Prabhjot Mehta; Edwards, A. G.; Feigerle, C. S.; Shaw, Robert W.; Coffey, D. W.; Heatherly, L.; Clausing, R.E.; Robinson, L.; Glasgow, David

doi:10.1016/s0925-9635(98)00444-0

Cited by 33 publications

(11 citation statements)

References 28 publications

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“…The exposed area of the silicon wafer was etched by atomic hydrogen from the gas phase allowing the incorporation of silicon atoms into the growing diamond. Although the presence of impurities in the overgrown material stemming from the filaments (tungsten) could not be completely excluded, due to the relatively low working temperature of the filaments (≈2000 °C) and the short deposition duration (10 min compared to 64 h in ref. ), their concentration should be very low.…”

Section: Methodsmentioning

confidence: 99%

“…Although the presence of impurities in the overgrown material stemming from the filaments (tungsten) could not be completely excluded, due to the relatively low working temperature of the filaments (≈2000 °C) and the short deposition duration (10 min compared to 64 h in ref. ), their concentration should be very low. Mehta Menon et al found that the diamond crystalline quality showed a strong correlation with the impurity level.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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In contrast to the more common nitrogen-vacancy (NV) center in diamond, the SiV possesses bright narrow band and spectrally stable optical transition concentrated (70% of the fluorescence) in its zero phonon line (ZPL) protected by inversion symmetry, even at room temperature. [4,5] Despite these attractive characteristics, some properties hinder the SiV applicability: short coherence times (nanosecond scale), limited mainly by coupling to the thermal acoustic phonon bath [6] and low extraction efficiency from the high-index diamond substrate. Different methods for mitigating these issues have been investigated in recent years, [1,[7][8][9][10] but currently there is no apparent approach to exploit the SiV superb optical properties at room temperature and at the same time to increase its photon outcoupling without compromising its optical quality and coherence. The use of nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection within the diamond, but at the same time may introduce additional decoherence [11] and optical instability mechanisms attributed to poor surface quality (surface defects containing spins, charge traps, nondiamond phases, surface termination of atoms and groups [12] ) as a result of the synthesis or structuring process. The SiVs can be formed in the diamond host via ion implantation of silicon ions [1,13] or by introducing silicon atoms from a solid or gas precursor during the growth stage of diamond layers. [14,15] The latter is considered to better preserve the quality of the diamond layer by avoiding implantation damages and promoting a smaller amount of vacancy clusters and nonradiative sites which can otherwise hinder the SiV applicability. Herein, the ability to sculpt nanostructures by a bottom-up approach enables the creation of higher quality complex structures that are not accessible via top-down fabrication techniques. [16][17][18] In particular, this concerns the fabrication of highly confined and deterministic nanostructures hosting an atom-like system that maintain the original substrate quality -a critical prerequisite for quantum information and sensing applications. Here, we present a robust and deterministic template-assisted bottom-up process for the creation of high-quality nanoscale diamond pyramids incorporating SiVs.The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template-assisted bottom-up process for the creation of high-quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefi...

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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“…The role of the filament material cannot be easily understood if other parameters are taken into account; for example, the filament temperature can be decreased, without losses in the film quality, by addition of very small amounts (¡0.1%) of oxygen or ammonia to the reactant gas mixture (as reported in ref. 47). In these cases, the good crystal quality was not due to metal incorporation in the film, but to a lower substrate temperature, thus giving evidence for the effective presence of synergistic effects.…”

Section: ''Hot Filament'' Cvdmentioning

confidence: 91%

“…Furthermore, the presence of impurities has been proved to influence the quality of the films, as reported by Shaw and co-workers. 47 In their work, a number of diamond films were synthesized and neutron activation analysis was performed to define the metal content of films grown using different filament metals. Differences in the tendency to form twins and in the relative growth rates in the v100w and v111w directions were observed, although not obviously related to the change of filament material during the synthesis.…”

Section: ''Hot Filament'' Cvdmentioning

confidence: 99%

Synthesis of diamond

Ferro

2002

J. Mater. Chem.

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Diamond is impressive because of its wide range of extreme properties. By most measures, diamond is 'the biggest and best': it is the hardest known material, has the lowest coefficient of thermal expansion, is chemically inert and wear resistant, offers low friction, has high thermal conductivity, and is electrically insulating and optically transparent from the ultraviolet to the far infrared. Diamond already finds use in many different applications including, of course, its use as a precious gem, but also as a heat sink, as an abrasive, and as inserts and/or wear-resistant coatings for cutting tools. Obviously, it is possible to envisage many other potential applications for diamond as an engineering material, but progress in implementing many such ideas has been hampered by the comparative scarcity of natural diamond. This paper reports on the progress of the long running quest for ways to synthesize diamond in the laboratory

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“…HFCVD offers easier scalability since the activation region simply depends upon the area covered by the tungsten or tantalum filaments. However, metal incorporation is possible [16,17], the filament stability is challenging [18] and growth rates are moderately low compared to other methods (∼1.6 µm h −1 ).…”

Section: Introductionmentioning

confidence: 99%

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

Cuenca,

Mandal,

Thomas

et al. 2021

Preprint

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A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM 0(n>1)p clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H 2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and transient a heat transfer solution at low and high microwave power density. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation.

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Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films

Cited by 33 publications

References 28 publications

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Synthesis of diamond

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

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