1993
DOI: 10.1063/1.109399
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Filament formation in a tapered GaAlAs optical amplifier

Abstract: Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier … Show more

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Cited by 49 publications
(10 citation statements)
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“…2 However, filamentation in the broad-area flared amplifier reduces the potential efficiency of the device. [3][4][5][6][7][8][9] Recent efforts by Botez et al 10 produced a device that incorporated the advantages of the flared amplifier design with lateral mode control of the antiguided laser. 11,12 The result, an antiguided flared amplifier, can produce power comparable to that of the flared amplifier, yet is less prone to the filamentation that can affect broad area devices.…”
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confidence: 98%
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“…2 However, filamentation in the broad-area flared amplifier reduces the potential efficiency of the device. [3][4][5][6][7][8][9] Recent efforts by Botez et al 10 produced a device that incorporated the advantages of the flared amplifier design with lateral mode control of the antiguided laser. 11,12 The result, an antiguided flared amplifier, can produce power comparable to that of the flared amplifier, yet is less prone to the filamentation that can affect broad area devices.…”
mentioning
confidence: 98%
“…However, several studies of tapered amplifiers have shown that noise either present on the input field or present in the amplifier can induce filamentation in the cw output of the amplifier. 6,9 In the case of amplitude fluctuations, nonuniformities in the input field can lead to uneven saturation of the gain and promote lateral mode instabilities. 6,7 Furthermore, noise within the amplifier can couple to the injected field through carrier induced antiguiding.…”
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confidence: 99%
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“…Thus it is anticipated that semiconductor spatial solitons will have the potential for implementing beam steering, routing, and optical processing in optical communications at practical power levels (mW) with fast response times (ps). Suppression of filament formation, which is a serious problem in broad area semiconductor devices as a result of carrier-induced refractive index changes [8][9][10], is another potential field of application for this new kind of dissipative solitons. Although there were some preliminary self-trapping experiments in SOAs [11], which have subsequently been proven to be unstable systems for soliton generation [12], to the best of our knowledge spatial solitons in semiconductor amplifiers have not been previously reported.…”
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confidence: 99%
“…Large-aperture ͑у100 m͒ devices such as the fanouttype master-oscillator power amplifier ͑MOPA͒ 1 and the ␣-distributed-feedback ͑DFB͒ laser 2 have displayed high diffraction-limited, single-frequency powers. However, such devices, having weak or no lateral-mode confinement, possess inherent instabilities, [3][4][5][6] thus raising serious issues of long-term stability and reliability. Therefore, there is a need for coherent large-aperture devices which not only select fundamental-mode operation but also maintain a stable mode to high drive levels.…”
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confidence: 99%