2008
DOI: 10.1002/sia.2821
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Figuring of elliptical hard X‐ray focusing mirror using 1‐dimensional numerically controlled local wet etching

Abstract: Numerically controlled local wet etching (NC-LWE) is a novel figuring method for fabricating the ultraprecision optics or finishing the functional materials. In this method, the localized etching area is formed by applying the combination nozzle that is constructed from the supply part and the suction part of the etchant, and the removal volume anywhere on the workpiece surface is determined by the dwelling time of the nozzle. We applied the NC-LWE for fabricating the plano-elliptical mirror made of synthesize… Show more

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Cited by 2 publications
(1 citation statement)
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References 13 publications
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“…State-of-the-art research fields such as projection optics for Extreme Ultraviolet Lithography (EUVL) (Otaki et al, 2002a;Stulen & Sweeney, 1999;Goldberg et al, 2004), focusing optics for X-ray microscope (Yamamura & Takai, 2008;Handa et al, 2008;Yumoto et al, 2008;Matsuyama et al, 2008), and Michelson interferometers for detection of gravitational waves (Ando et al, 2001;Sato et al, 1999) require ultra precise mirrors with large surface areas and extremely low surface figure error (in the sub-nanometer scale). In EUVL, a light wave of 13.5 nm is used for photoresist exposure, and such an optical system accepts reflection optics instead of refractive optics owing to the short wavelength.…”
Section: Introductionmentioning
confidence: 99%
“…State-of-the-art research fields such as projection optics for Extreme Ultraviolet Lithography (EUVL) (Otaki et al, 2002a;Stulen & Sweeney, 1999;Goldberg et al, 2004), focusing optics for X-ray microscope (Yamamura & Takai, 2008;Handa et al, 2008;Yumoto et al, 2008;Matsuyama et al, 2008), and Michelson interferometers for detection of gravitational waves (Ando et al, 2001;Sato et al, 1999) require ultra precise mirrors with large surface areas and extremely low surface figure error (in the sub-nanometer scale). In EUVL, a light wave of 13.5 nm is used for photoresist exposure, and such an optical system accepts reflection optics instead of refractive optics owing to the short wavelength.…”
Section: Introductionmentioning
confidence: 99%