Fieldlike spin-orbit torque in ultrathin polycrystalline FeMn films

Yang, Yumeng; Xu, Yonggang; Zhang, Xiaoshan; Wang, Ying; Zhang, Shufeng; Li, Run Wei; Mirshekarloo, Meysam Sharifzadeh; Yao, Kui; Wu, Yihong

doi:10.1103/physrevb.93.094402

Cited by 34 publications

(18 citation statements)

References 66 publications

(95 reference statements)

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“…H an is the anisotropic field and H mole is the molecular field. H an of FeMn is 5 mT 27 . H mole is estimated by the value of Fe as 10 3 T. The threshold field of spin-flop transition would be 2(5 mT · 10 3 T) 1/2 = 4.5 T, far above our cooling field of 1 T. Hence, the cooling field can create an AFM order arranged along x -axis dominantly, as case I in Fig.…”

Section: Resultsmentioning

confidence: 97%

Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 105 A/cm2 dc Current

Han

Wang

Pan

et al. 2016

Sci Rep

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Antiferromagnet (AFM) spintronics with reduced electrical current is greatly expected to process information with high integration and low power consumption. In Pt/FeMn and Ta/FeMn hybrids, we observe significant resistance variation (up to 7% of the total resistance) manipulated by 105 A/cm2 dc current. We have excluded the contribution of isotropic structural effects, and confirmed the critical role of the spin Hall injection from Pt (or Ta) to FeMn. This electrical current-manipulated resistance (i.e. electroresistance) is proposed to be attributed to the spin-Hall-effect-induced spin-orbit torque in FeMn. Similar results have also been detected in plain IrMn films, where the charge current generates spin current via the spin Hall effect with the existence of Ir atoms. All the measurements are free from external magnetic fields and ferromagnets. Our findings present an interesting step towards high-efficiency spintronic devices.

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Section: Resultsmentioning

confidence: 97%

Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 105 A/cm2 dc Current

Han

Wang

Pan

et al. 2016

Sci Rep

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“…Here we report on the observation of both ferromagnetism and SOT effect in [FeMn/Pt] n multilayers with or without an additional thick Pt layer. This work is inspired by our recent observation of SOT effect in FeMn/Pt bilayers 28 and the earlier report of proximity effect at FeMn/Pt interfaces 29 . By controlling the Pt and FeMn layer thickness, we demonstrate that it is possible to achieve both ferromagnetic properties and SOT effect in [FeMn(t 1 )/Pt(t 2 )] n multilayers above room temperature (RT), with t 1 and t 2 in the range of 0.2 nm -1 nm and 0.4 nm -0.8 nm, respectively.…”

Section: Introductionmentioning

confidence: 86%

Self-current induced spin-orbit torque in FeMn/Pt multilayers

Yang

Yao

et al. 2016

Sci Rep

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Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely proportional to the thickness of the ferromagnetic layer, sizable effect has only been realized in bilayers with an ultrathin ferromagnetic layer. Here we demonstrate that, by stacking ultrathin Pt and FeMn alternately, both ferromagnetic properties and current induced spin-orbit torque can be achieved in FeMn/Pt multilayers without any constraint on its total thickness. The critical behavior of these multilayers follows closely three-dimensional Heisenberg model with a finite Curie temperature distribution. The spin torque effective field is about 4 times larger than that of NiFe/Pt bilayer with a same equivalent NiFe thickness. The self-current generated spin torque is able to switch the magnetization reversibly without the need for an external field or a thick heavy metal layer. The removal of both thickness constraint and necessity of using an adjacent heavy metal layer opens new possibilities for exploiting spin-orbit torque for practical applications.

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“…Detectability of the signal below the Néel temperature and its insensitivity to external fields supported the hypothesis that the torque relates to the antiferromagnetic order. Other attempts reported efficient spin Hall assisted magnetic order reversal in FeMn and IrMn alloys Yang et al, 2016). However, these alloys were directly grown on SiO 2 layers, a process which is known to hamper the production of good quality antiferromagnets.…”

Section: B Manipulation By Spin Hall Torquementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Fieldlike spin-orbit torque in ultrathin polycrystalline FeMn films

Cited by 34 publications

References 66 publications

Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 105 A/cm2 dc Current

Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 105 A/cm2 dc Current

Self-current induced spin-orbit torque in FeMn/Pt multilayers

Antiferromagnetic spintronics

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