Field Modeling of the Influence of Defects Caused by Bending of Conductive Textronic Layers on Their Electrical Conductivity

Abstract

One of the critical parameters of thin-film electrically conductive structures in wearable electronics systems is their conductivity. In the process of using such structures, especially during bending, defects and microcracks appear that affect their electrical parameters. Understanding these phenomena in the case of thin layers made on flexible substrates, including textile ones, which are incorporated in sensors that monitor vital functions, is a key aspect when applying such solutions. Cracks and defects in such structures appearing during their use may be critical for the correct operation of such systems. In this study, the influence of defects resulting from the repeated bending of the conductive layer on its conductivity is analyzed. The anisotropic and partly stochastic characteristics of the defects are also taken into account. The defects are modeled in the form of broken lines, whose segments are generated in successive iterative steps, thus simulating the gradual wear of the layer material. The lengths and inclinations of these sections are determined randomly, which makes it possible to consider the irregularity of real defects of this type. It was found that near the percolation threshold, defects with a more irregular shape have a dominant effect on the reduction of conductivity due to the greater probability of their connection. The simulation results were compared with the experimental data. It was found that the dependence of the conductivity of the conductive layer on the number of bends is logarithmic. This allowed for the derivation of a formula linking the iteration number of the simulation procedure with the number of bends. Improving the strength of such layers is a technological challenge for researchers.