Field enhancement of the photoelectric and secondary electron emission from CsI

Breskin, A.; Chechik, R.

doi:10.1063/1.358791

Cited by 33 publications

(25 citation statements)

References 24 publications

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“…nm CsI films are found to be about 5.30 eV, 5.25 eV, 5.00 eV and 5.20 eV respectively. The observed discrepancy with and Buzulutskovet al [41] data (Eg∼ 5.9 eV) may be due to the heat-enhanced CsI film compared to "as-deposited"…”

Section: Resultscontrasting

confidence: 59%

“…We have found that the band gap energies of 500 nm, 300 nm, 50 nm and 30 nm CsI films are about 5.30 eV, 5.25 eV, 5.00 eV and 5.20 eV respectively. A. Buzulutskov et al [41] have also derived the band gap energy to be 5.90 eV from experimental QE dependence on wavelength. The high band gap energy obtained by A. Buzulutskov et al [41] may be due to the heat treatment of CsI film compared to "as-deposited" films in our case.…”

Section: Optical Properties Of Csi Thin Filmsmentioning

confidence: 99%

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Structural and optical properties of CsI thin films: Influence of film thickness and humidity

Jammal

Rai

Pandit

et al. 2018

Physica B: Condensed Matter

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Structural and optical studies have been performed on the thermally-evaporated "as-deposited" and "humid air aged" CsI thin films. The structural analysis for both "as-deposited" and "humid air aged" films shows a well-oriented peaks position of (110) and (220) lattice planes with a compressive stress in the films. The crystal quality has been investigated through the structural parameters. The increase in peak intensity as well as sharpness with film thickness implies the improvement of crystallinity. The optical absorbance of CsI films has been analyzed in the wavelength range of 190 nm -900 nm in order to estimate the band gap energy of the films. Slater's model has also been used to explain the degradation of band gap energy with the increase in crystallite size. been tested successfully under liquid xenon atmosphere for its use in dark matter search experiment [21]. The detectors used for these experiments generally work in two modes; reflective (opaque) and semitransparent mode. The Quantum Yield (QY) of reflective films has been observed to be higher in comparison with the semitransparent films. This is because the semitransparent films have a small escape length (L≤ 10 nm) [16]. Also, it has been revealed that the reflective films have more chemical stability against the moisture compared to the semitransparent films [17].Keeping these facts in mind, the main issue related to CsI photocathode is the aging which causes a degradation in the photoemission properties and thus limits their life. In order to develop and optimize large area photocathodes based detector, the study of the optical and structural properties of the "as-deposited" and "aged" CsI photocathodes is ultimately required. In literature, there are several studies on CsI ageing, but its mechanism does not have a clear understanding yet. A. S. Tremsin et al. [23] have used TEM technique to study the structural properties of polycrystalline CsI thin film of 100 nm thickness under the impact of humid air and UV irradiation. M. A. Nitti et al. [24] have examined the bulk structure and the surface of freshly and humid air exposed 100 nm CsI film by XRD and XPS measurements. Recently, Triloki et al. [25] have studied the structural properties of thermally-evaporated CsI thin films of different thicknesses by using XRD and TEM techniques. C. Lu and K.T. McDonald [16] have previously reported the optical properties of freshly CsI thin films up to 31 nm thickness. This work is an extension of the previous works, where we have systematically studied the structural and optical properties of semitransparent and reflective CsI thin films grown under similar vacuum-environment in case of "as-deposited" and "humid air aged". Experimental Details Deposition of CsI thin filmsThe deposition of reflective (500 nm and 300 nm) and semitransparent (50 nm and 30 nm) CsI thin films was done in a stainless steel 18" diameter spherical vacuum chamber. Prior to the deposition process, the substrates were cleaned by treating with distilled water, acetone, and alcohol to...

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Section: Resultscontrasting

confidence: 59%

Section: Optical Properties Of Csi Thin Filmsmentioning

confidence: 99%

Structural and optical properties of CsI thin films: Influence of film thickness and humidity

Jammal

Rai

Pandit

et al. 2018

Physica B: Condensed Matter

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“…The value of photon energy (hν) extrapolated to α = 0 gives an absorption edge which corresponds to the optical band gap energy E g . The extrapolation gives an optical band gap energy E g ≈ 5.43 eV, which can be compared with the band gap energy E g ≈ 5.9 eV derived from experimental QE dependence on wavelength [10] for heat enhanced CsI thick films.…”

Section: Optical Properties Of 500 Nm Thick Csi Filmmentioning

confidence: 99%

Photoemission and optical constant measurements of a Cesium Iodide thin film photocathode

Pandit

Rai

Gupta

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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The performance of cesium iodide as a reflective photocathode is presented. The absolute quantum efficiency of a 500 nm thick film of cesium iodide has been measured in the wavelength range 150 nm to 200 nm. The optical absorbance has been analyzed in the wavelength range 190 nm to 900 nm and the optical band gap energy has been calculated. The dispersion properties were determined from the refractive index using an envelope plot of the transmittance data. The morphological and elemental film composition have been investigated by atomic force microscopy and X-ray photo-electron spectroscopy techniques.

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“…The CsI/Si sample showed a slight increase throughout the range of bias voltages, which is consistent with the results reported previously. 9 On the other hand, the relative QE of the CsI/ MgO/MWCNTs/Si sample increased significantly with increasing bias voltage, occasionally exceeding 10 000 ͑data not shown here͒. The high value in the graph, approximately 2000 at a bias voltage of approximately Ϫ160 V, suggests that a single photon can generate as many as 500 electrons when a plausible absolute QE ͑147 nm͒ of 0.25 is used for CsI.…”

Section: Evaluation Of a Cesium Iodide Photocathode Assisted With Mgomentioning

confidence: 90%

Evaluation of a cesium iodide photocathode assisted with MgO-coated multiwall carbon nanotubes

Lee¹,

Park²,

Lee³

et al. 2010

Applied Physics Letters

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This paper reports the enhanced photocurrent and relative quantum efficiency of cesium iodide (CsI) films on magnesium oxide (MgO)-coated multiwall carbon nanotubes (MWCNTs) on a silica substrate, i.e., CsI/MgO/MWCNTs/Si, when illuminating with 147 nm photons under an external electric field. The incorporation of MWCNTs resulted in significant enhancement of the photocurrent by several orders of magnitude compared to that of a conventional CsI. An analysis of the photoelectron energy spectrum attributed the phenomena to the creation of a very high electric field through the MgO/CsI film with the subsequent generation of avalanche secondary electrons.

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Field enhancement of the photoelectric and secondary electron emission from CsI

Cited by 33 publications

References 24 publications

Structural and optical properties of CsI thin films: Influence of film thickness and humidity

Structural and optical properties of CsI thin films: Influence of film thickness and humidity

Photoemission and optical constant measurements of a Cesium Iodide thin film photocathode

Evaluation of a cesium iodide photocathode assisted with MgO-coated multiwall carbon nanotubes

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