Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation

High-performance poly-Si-TFT-based TiN-aluminanitride-vacuum-silicon (TANVAS) trapping-charge memory has been demonstrated utilizing high-k blocking oxide and vacuum tunneling layer for the first time. In particular, the vacuum, lowest k in nature, was introduced to replace the traditional tunneling oxide. Furthermore, the alumina high-k blocking oxide was applied to upgrade the electric field across the tunneling layer. Based on the enlarged k-value difference between the blocking and tunneling layers, the TANVAS featured considerable field enhancement across the tunneling layer, thus much improving the program/erase efficiencies. In addition, owing to the suppression of defect creation in the tunneling layer, the TANVAS also exhibited superior retention characteristics. These excellent memory characteristics of TANVAS are therefore promising for the 3-D Flash and system-on-panel applications.Index Terms-Field-enhanced nanowire (FEN), high-k, poly-Si, system-on-panel (SOP), thin-film transistors (TFTs), trappingcharge memory.

show abstract

“…1 [8]- [10]. A 1.0-μm-thick thermal SiO 2 was first grown on a single-crystal silicon wafer as starting substrate.…”

Section: Device Fabricationmentioning

confidence: 99%

Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN–Alumina–Nitride–Vacuum–Silicon Structure

Liu

Liao

et al. 2011

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…As a probable effort to improve bit density of NAND flash memory while suppressing the performance degradation, NAND string structures using fringing field from control gates (CGs) are proposed. [1][2][3][4][6][7][8][9] A single MOSFET using fringing field from the gate was studied by other research group. 5) As a method to enlarge the usage of the fringing field from the gate, the NAND string with underlapped source/drain (S/D) or no S/D between gates was proposed in ref.…”

Section: Introductionmentioning

confidence: 99%

“…3) Excellent characteristics of a NAND string which has cells with virtual S/D and increased L g at a fixed pitch were reported. 4) Although the NAND string structures to maximize the usage of fringing field from the control gates were reported [6][7][8] and theoretically studied, 9) NAND string characteristics with body doping modulation has not been reported yet. By changing the counter-doping concentration of n-type dopants in a space region between gates for a given p-type doping concentration, we can modulate net doping concentration in the space region, which means that the p-type doping between cells can be less than that in the channel or the n-type counter doping region is fully depleted or neutral when a pass bias (V pass ) is 0 V. Due to the counter doping, the virtual source/drain regions can be formed easily at the space, resulting in electrically connection of cell transistors in a string.…”

Section: Introductionmentioning

confidence: 99%

Effects of Body Doping in a NAND Flash String without Source/Drain

Kim¹,

Cho

Kwon

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Cell structure using fringing field from control gate (CG) is very promising for a scaled NAND flash memory beyond sub-40 nm node. We investigated a new NAND string structure not with n-type source/drain (S/D) regions but with p-type regions in the space between gates. Even though the NAND string has a p-type region instead of n-type S/D in the space between adjacent two cells, induced layer (virtual source/drain) can be easily formed in the space by the fringing field from the CGs. When comparing a conventional NAND string with n-type S/D, the proposed structure shows better drain induced barrier leakage (DIBL) and subthreshold swing (SS) characteristics, and also shows better immunity against the process variation than conventional structure with n-type S/D. The electrical characteristics of the proposed structure were investigated as parameters of the width and doping concentration at the p/n-type region. As a NAND cell string, the current drivability of the proposed structure was also studied.

show abstract

“…1. The details of process flow could be found in our previous report [1]. After the a-Si film was transferred into poly-Si by solid phase crystallization at 600 °C for 24 hours in N 2 ambient, the diluted hydro-fluoric acid (DHF) solution was used to etch the SiO 2 strip for 100-nm-thick to fabricate the poly-Si NWs.…”

mentioning

confidence: 99%

Polysilicon Nanowires Biosensors for pH Measurement and DNA Detection Utilizing High-k Dielectric Sensing Membrane

Wu¹,

Hsu²,

Wang

et al. 2012

Meet. Abstr.

Self Cite

View full text Add to dashboard Cite

show abstract

Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation

Cited by 6 publications

References 9 publications

Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN–Alumina–Nitride–Vacuum–Silicon Structure

Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN–Alumina–Nitride–Vacuum–Silicon Structure

Effects of Body Doping in a NAND Flash String without Source/Drain

Polysilicon Nanowires Biosensors for pH Measurement and DNA Detection Utilizing High-k Dielectric Sensing Membrane

Contact Info

Product

Resources

About