Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au−Al2O3 -Cr metal-insulator-metal structures

Abstract

Metal-insulator-metal structures based on ultrathin high-k dielectric films are underpinning a rapidly increasing number of devices and applications. Here, we report detailed electrical characterizations of asymmetric metalinsulator-metal devices featuring atomic layer deposited 2-nm-thick Al 2 O 3 films. We find a high consistency in the current density as a function of applied electric field between devices with very different surface areas and significant asymmetries in the IV characteristics. We show by TEM that the thickness of the dielectric film and the quality of the metal-insulator interfaces are highly uniform and of high quality, respectively. In addition, we develop a model which accounts for the field enhancement due to the small sharp features on the electrode surface and show that this can very accurately describe the observed asymmetry in the current-voltage characteristic, which cannot be explained by the difference in work function alone.

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

“…Atomic layer deposition (ALD) is a monatomic vapor deposition technique achieved by alternating saturated gas–surface reactions, based on which the film can be deposited in a self-limited growth mode and exhibits superior homogeneity and excellent uniformity [25,26,27,28,29]. This technique supplies a convenient way to devise nanolaminates with optimal performance.…”

Studi Elektrostatik Elektroda Runcing dan Aplikasinya pada Perangkat Floating Gate Memory

“…Dengan mengetahui distribusi potensial di sepanjang sumbu-z, profil pita energi konduksi dapat dihitung sebagai berikut [19]:…”

A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

“…It is known that a considerable electric field amplification occurs at the tip apex. [36][37][38] In the simplest case, the electric field in the immediate vicinity of the tip can be estimated as E MIT = V MIT /r, where r is the tip curvature radius. In the case of interest, we have r = 10 nm and V MIT = 105 mV and, hence, E MIT = 10.5 V µm −1 .…”