Field emitter arrays with current saturation and current control capabilities

Ting, A.; Tang, C. M.; Ma, Dongge; McCarthy, Daniel; Peckerar, M.; Swyden, T.A.

doi:10.1109/plasma.1991.695471

Cited by 3 publications

(1 citation statement)

References 1 publication

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“…As one of the approaches, active device controlled field emitter array (FEA) was proposed by Ting, et a1 [3]. Integration with various active devices was also tried [4-71. Most of all, the integration with MOSFET has been intensively researched because of its well-developed fabrication process.…”

mentioning

confidence: 99%

MOSFET-controlled field emission display (MCFED)

Lee

Kim²,

Oh³

et al.

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)

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To evaluate the validity of MCFEA for display application, a 0.7"-diagonal monochrome MCFED was fabricated. The electrical properties of FEA, HVMOSFET, and MCFEA were measured respectively. The gate hole diameter of a fabricated FEA is 1.25 pm and the extraction gate voltage to obtain the emission current of I O nA/tip is 71 V. The threshold voltage and the breakdown voltage of a HVMOSFET are 1.4 V and SI V. The I-V characteristics of a MCFEA shows that the emission currents of FEA are well controlled by the control gate bias of HVMOSFET. To exclude the harmful effects due to packaging process, the performance of the MCFED was evaluated in a high vacuum chamber. The MCFED shows the better uniformity than a conventional FED.

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mentioning

confidence: 99%

MOSFET-controlled field emission display (MCFED)

Lee

Kim²,

Oh³

et al.

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)

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Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

Nagao¹,

Tamura²,

Matsukawa³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistorsA study on the capacitance-voltage characteristics of metal-Ta 2 O 5 -silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications A memory cell with single-electron and metal-oxide-semiconductor transistor integration Si field emitter arrays ͑FEAs͒ were monolithically integrated with metal-oxide-semiconductor field-effect-transistor ͑MOSFET͒ based driving circuits on a Si chip for the first step toward developing the field-emission-display-on-a-chip ͑FED-on-a-chip͒, which is a candidate for the next-generation FED. We developed a fabrication process of Si FEAs integrated with MOSFET driving circuits. A 4ϫ4 matrix Si FEA, emission-control MOSFET, and simple driving circuits consisting of a shift register were integrated on the same chip. The operation of each element, such as MOSFET-controlled Si FEAs and logic circuits for the driver, was confirmed. The emission current from the Si FEA can be controlled by the built-in MOSFET at a voltage of less than 5 V, which can be driven by the built-in driving circuits. The operation of the 4ϫ4 matrix FEA with driving circuits was demonstrated. This is the first operation of the FEA integrated with MOSFET logic circuits. The detailed design and fabrication processes are described.

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Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

Koga

Kanemaru²,

Matsukawa³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inCharacteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation Appl. Phys. Lett. 98, 053501 (2011); 10.1063/1.3549178 Physics of enhanced impact ionization in strained-Si p -channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 92, 153501 (2008); 10.1063/1.2909082 Metal-oxide-semiconductor field-effect transistor-structured Si field emitter array with a built-in ring gate lens J. Vac. Sci. Technol. B 21, 495 (2003); 10.1116/1.1540984Silicon metal-oxide-semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishingTo improve emission stability and realize low turn-on voltage, a silicon field emitter controlled by a metal-oxide-semiconductor field effect transistor ͑MOSFET͒ was fabricated and demonstrated. The emitter cathode was fabricated in the n-well drain of the MOSFET on a p-type silicon substrate. In addition to the extraction gate, another electrode was introduced as the MOSFET's control gate. This gate's oxide thickness was designed to be thinner than that of the extraction gate for low turn-on voltage. Furthermore, two types of drain structure were adopted to compare device reliability with regard to impact ionization effect. Experimental results showed that emission current was effectively controlled by the MOSFET at a gate voltage of less than 5 V. It was found that impact ionization was caused near the drain edge, where a high electric field was concentrated, in the conventional drain structure. Consequently, MOSFET characteristics were significantly influenced.

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Field emitter arrays with current saturation and current control capabilities

Cited by 3 publications

References 1 publication

MOSFET-controlled field emission display (MCFED)

MOSFET-controlled field emission display (MCFED)

Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

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