MOSFET-controlled field emission display (MCFED)

Abstract

To evaluate the validity of MCFEA for display application, a 0.7"-diagonal monochrome MCFED was fabricated. The electrical properties of FEA, HVMOSFET, and MCFEA were measured respectively. The gate hole diameter of a fabricated FEA is 1.25 pm and the extraction gate voltage to obtain the emission current of I O nA/tip is 71 V. The threshold voltage and the breakdown voltage of a HVMOSFET are 1.4 V and SI V. The I-V characteristics of a MCFEA shows that the emission currents of FEA are well controlled by the control gate bias of HVMOSFET. To exclude the harmful effects due to packaging process, the performance of the MCFED was evaluated in a high vacuum chamber. The MCFED shows the better uniformity than a conventional FED.