Field Emission from Low Temperature Carbon Coated Silicon Tips

Kosarev, A.; Zhirnov, V.V.; Vinogradov, A. Ya.; Shutov, M.V.; Bormatova, L.V.; Givargizov, E. I.; Felter, T. E.

doi:10.1557/proc-509-89

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…Previously we have reported fabrication of a carbon film with low field emission threshold, 1 which also improved emission from silicon tips. 2 Pregrowth treatment of substrates is of much importance, and the effect of substrate type is also significant. [1][2][3] Milne et al 4 studied the effect of back contacts with varied work functions on electron field emission and found no direct dependence on the work function.…”

Section: Introductionmentioning

confidence: 99%

Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

Kosarev

Andronov²,

Vinogradov

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The effect of material and surface morphology of the back contact on field emission has been studied in carbon films deposited by very high frequency chemical vapor deposition at low temperature. The emission current was measured as a function of applied field for carbon films deposited simultaneously on various substrates coated with metals having different work functions ͑Ti, Cu, Ni, and Pt͒. Different metals demonstrated different types of microstructure and surface morphology. Therefore, the effect of back contact morphology was especially studied. The material of the back contact influenced the emission properties, but no direct correlation between emission and the work function of metal was observed. The field emission threshold was found to be affected by the roughness of the back contact: a Ti contact with 270 nm roughness showed emission threshold of E th ϭ3 V/m, while a contact made of the same material, but with roughness of ϳ2.5 nm had E th ϭ13 V/m.

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Section: Introductionmentioning

confidence: 99%

Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

Kosarev

Andronov²,

Vinogradov

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[1][2][3] Polysilicon is used for driving integrated circuits. Improvement of field emission characteristics in Si tips and flat silicon samples coated with non-diamond carbon film has been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of carbon coating on electron field emission from polysilicon

Chakhovskoi

Vossough

Hunt

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Carbon films deposited at relatively low temperatures were studied as a coating for polysilicon substrates to provide enhancement of the electron field emission. Undoped and phosphor doped polysilicon substrates were coated by carbon films grown by a very high frequency chemical vapor deposition process. Critical process parameters include substrate temperature of 225°C, pressure of 56 mTorr, loaded power of 2 W/cm 2 , and discharge frequency of 56 MHz. The substrates were pretreated prior to film deposition, and bias enhanced nucleation was performed in hydrogen/C 6 H 14 plasma. A carbon layer was grown to a thickness of 700 nm. Field emission measurements were performed in an ultrahigh vacuum chamber equipped with an electron gun, a carousel for five samples, and a Faraday cup. A multigrid quasispheric energy analyzer was used for Auger electron spectroscopy and electron energy loss spectroscopy characterization. Additionally, before and after field emission measurements, the secondary emission coefficient was measured by a scanning electron beam, which provided a two-dimensional map of the sample surface. The field emission current was measured in a diode configuration using a spacer thickness of 45-55 m through a current collection window 2ϫ5 mm 2 . Emission current-voltage curves were measured from three different regions of every sample by shifting the current collection window over the sample. A surface conditioning effect was observed, resulting in stabilization and better reproducibility of the emission current-voltage characteristics. The most significant changes in emission characteristics were observed in undoped polysilicon substrates with carbon coatings. Low deposition temperatures make this coating process very attractive because of its compatibility with addressing circuitry based on either silicon or poly-, microcrystalline, or amorphous silicon.

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Electron Field Emission from Undoped and Doped DLC Films

et al. 1999

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In this presentation the electron field emission and electrical conductivity of J undoped and nitrogen doped DLC films have been investigated.Undoped and nitrogen doped DLC films were grown by PE CVD and Cl&:H2:N2 gas mixtures, correspondingly. During nitrogen doped DLC film/ deposition$.he nitrogen content in'& mixture was varied within the range &O to 45%. In-situ @gas-phase doping allowed us&to deposit DLC films with different eef.nitrogen &the&. DLC films were deposited under three different levels of gas pressure in the chamber: 0.2,0.6 and 0.8 Torr.The measurements of emission current from samples were performed in the vacuum system which could be pumped to a stable pressure of 10e6 Torr. The emission current was measured in the diode structure. The emitter-anode spacing L was constant and equal to 20 pm.

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Field Emission from Low Temperature Carbon Coated Silicon Tips

Cited by 4 publications

References 7 publications

Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

Effect of carbon coating on electron field emission from polysilicon

Electron Field Emission from Undoped and Doped DLC Films

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