Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Алешин, А. Н.; Щербаков, И. П.; Трапезникова, И. Н.; Petrov, V. N.

doi:10.1134/s1063783417120034

Cited by 16 publications

(14 citation statements)

References 19 publications

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“…They fabricated FETs from CH 3 NH 3 PbI 3 microplates by adopting a two-step growth method and a dry-transfer technique. [114] The transfer characteristics show a weak hysteresis with hole, and electron mobilities of ≈5 and ≈3 cm 2 V −1 s −1 , respectively, which are higher than the mobility value ≈1 cm 2 V −1 s −1 obtained earlier for FETs based on CH 3 NH 3 PbI 3 . The work function of graphene can be easily tuned by the back-gate voltage, which makes it possible to tune the barrier height between graphene and MAPbI 3 .…”

Section: Lead (Ii)-based Perovskite Materials As Semiconductormentioning

confidence: 56%

“…More Perovskite Types : Other Pb‐based perovskite materials, such as CH 3 NH 3 PbBr 3 , Cs x (MA 0.17 FA 0.83 ) 1−x Pb(Br 0.17 I 0.83 ) 3 , and CsPbBr 3 , were also studied for their application in FETs. For example, CH 3 NH 3 PbBr 3 ‐based FETs exhibited ambipolar current‐voltage characteristics . The transfer characteristics show a weak hysteresis with hole, and electron mobilities of ≈5 and ≈3 cm 2 V −1 s −1 , respectively, which are higher than the mobility value ≈1 cm 2 V −1 s −1 obtained earlier for FETs based on CH 3 NH 3 PbI 3 .…”

Section: Perovskite Materials For Fetsmentioning

confidence: 67%

“…[128,[148][149][150] Furthermore, large organic cations are less mobile in the lattice, leading to more stable crystal structure. [153] Additionally, CH 3 NH 3 PbBr 3 -based FETs exhibited better stability compared to CH 3 NH 3 PbI 3 , [114] which shows a weak hysteresis with hole and electron mobilities of ≈5 and ≈3 cm 2 V −1 s −1 , respectively. The aromatic ammonium (PEA) has a larger molecule size, therefore is less mobile than MA.…”

Section: Stabilitymentioning

confidence: 99%

“…They applied mono-or bilayer graphene stripes as the source-drain contact electrodes for the perovskite microplate FET. [114] Yusoff et al [115] improved the thermal stability of perovskites by integrating inorganic Cs and organic cations in the film, thereby suppressing the photoinactive hexagonal δ phase for the FET. Additionally, graphene improves device stability during fabrication, allowing the encapsulation by boron nitride.…”

Section: Lead (Ii)-based Perovskite Materials As Semiconductormentioning

confidence: 99%

“…Matsushima et al [38] fabricated a FET device using PEASnI 4 films. [114] Yusoff et al [115] enhanced the thermal stability of perovskites by partial substituting organic cations with inorganic Cs and halide ion mixing (e.g., Cs x (MA 0.17 FA 0.83 ) 1− This is one of the reasons why hysteresis is diminished in the source-drain current/gate voltage-current curve.…”

Section: Stabilitymentioning

confidence: 99%

See 4 more Smart Citations

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Pisula

Yusoff

et al. 2019

Adv Elect Materials

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Section: Lead (Ii)-based Perovskite Materials As Semiconductormentioning

confidence: 56%

Section: Perovskite Materials For Fetsmentioning

confidence: 67%

Section: Stabilitymentioning

confidence: 99%

Section: Lead (Ii)-based Perovskite Materials As Semiconductormentioning

confidence: 99%

Section: Stabilitymentioning

confidence: 99%

See 3 more Smart Citations

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Pisula

Yusoff

et al. 2019

Adv Elect Materials

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Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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Photoinduced Nonvolatile Memory Transistor Based on Lead‐Free Perovskite Incorporating Fused π‐Conjugated Organic Ligands

Zhang,

Shao,

Wang

et al. 2023

Advanced Materials

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Perovskites field‐effect transistors (PeFETs) have been intensively investigated for their application in detector and synapse. However, synapse based on PeFETs is still very difficult to integrate excellent charge carrier transporting ability, photosensitivity and nonvolatile memory effects into one device, which is very important for developing bionic electronic devices and edge computing. Here, two‐dimensional perovskites were synthesized by incorporating fused π‑conjugated pyrene‐O‐ethyl‐ammonium (POE) ligands and a systematic study was conducted to obtain enhanced performance and reliable PeFETs. The optimized (POE)2SnI4 transistors display the hole mobility over 0.3 cm2V−1s−1, high repeatability and operational stability. Meanwhile, the derived photo memory devices show remarkable photoresponse, with a switching ratio higher than 105, high visible light responsivity (>4×104 A/W), and stable storage‐erase cycles, as well as competitive retention performance (104 s). The photoinduced memory behavior can be benefiting from the insulating nature of quantum‐well in 2D perovskite under dark and its excellent light sensitivity. The excellent photo memory behaviors have been maintained after 40 days in a N2 atmosphere. Finally, a 2D perovskite‐only transistors with a multi‐level memory behavior (16 distinct states) was described by controlling incident light pulse. This work provides broader attention toward 2D perovskite and optoelectronic application.This article is protected by copyright. All rights reserved

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Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Cited by 16 publications

References 19 publications

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Photoinduced Nonvolatile Memory Transistor Based on Lead‐Free Perovskite Incorporating Fused π‐Conjugated Organic Ligands

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