“…Many mono-dimensional structures have proven to exhibit better properties than the same material with bulk size, and the bottom-up approach would permit to combine appropriate building blocks to obtain unique functions, or combinations of functions, in integrated nanosystems, unavailable in the conventional top-down approach. Several electronic devices, such as power diodes or field-effect transistors based on 3C-SiC (SiCFET) have already been developed (Zhou et al 2006a, Chung et al, 2008 and SiC power diodes have already reached the market stage (Roussel, 2007). Several devices are fabricated by thermally growing SiO 2 layer on n-type Si wafers followed by deposition of parallel Au contacts, used as source and drain electrodes, while the n-type silicon is used as back gate.…”