Field-effect transistor based on /spl beta/-SiC nanowire

Zhou, Weimin; Fang, F.; Hou, Zhenhua; Liu, Yan; Zhang, Y.F.

doi:10.1109/led.2006.874219

Cited by 77 publications

(53 citation statements)

References 13 publications

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“…Conversion of C-fibers has been also applied for SiC NW fabrication [21,22]. C-fibers have been produced by electrospinning of polyacrylonitrile (PAN) nanofibers at ambient temperature and subsequent carbonization at 700ºC in [21].…”

Section: Conversion Of Carbon Nanotubes (Cnts) and C-fibersmentioning

confidence: 99%

“…There are only few experimental studies on 3C-SiC nanowire FETs (see a typical schematic in figure 21a), all presenting similar device performance in terms of transconductance and carrier mobility [6,22,67]. The analysis of I-V characteristics (figure 21b) in the first one by Seong et al [6], has shown that the NWs were highly n-type doped with a resistivity of 2.…”

Section: Sic Nanowire Field Effect Transistors (Sic-nwfets)mentioning

confidence: 99%

“…The analysis of I-V characteristics (figure 21b) in the first one by Seong et al [6], has shown that the NWs were highly n-type doped with a resistivity of 2. [22] having as only difference the SiC NW growth method (conversion of activated C fibers by using SiO vapors instead of VLS growth in the case of Seong et al [6]). Their SiC NWFET had slightly better performance compared with the results reported in [6] and [67].…”

Section: Sic Nanowire Field Effect Transistors (Sic-nwfets)mentioning

confidence: 99%

See 2 more Smart Citations

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

181

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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Section: Conversion Of Carbon Nanotubes (Cnts) and C-fibersmentioning

confidence: 99%

Section: Sic Nanowire Field Effect Transistors (Sic-nwfets)mentioning

confidence: 99%

Section: Sic Nanowire Field Effect Transistors (Sic-nwfets)mentioning

confidence: 99%

See 1 more Smart Citation

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

181

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“…Many mono-dimensional structures have proven to exhibit better properties than the same material with bulk size, and the bottom-up approach would permit to combine appropriate building blocks to obtain unique functions, or combinations of functions, in integrated nanosystems, unavailable in the conventional top-down approach. Several electronic devices, such as power diodes or field-effect transistors based on 3C-SiC (SiCFET) have already been developed (Zhou et al 2006a, Chung et al, 2008 and SiC power diodes have already reached the market stage (Roussel, 2007). Several devices are fabricated by thermally growing SiO 2 layer on n-type Si wafers followed by deposition of parallel Au contacts, used as source and drain electrodes, while the n-type silicon is used as back gate.…”

Section: Applicationsmentioning

confidence: 99%

Cubic SiC Nanowires: Growth, Characterization and Applications

Attolini¹,

Rossi²,

Fabbri³

et al. 2010

Nanowires

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“…Seong and his coworkers obtained the SiC NWs by the CVD methods, and a low resistivity of 2.2 9 10 -2 X was achieved at a gate voltage of 0 V [7]. In another paper, Zhou's group synthesized the b-SiC NWs on carbon fiber by thermal evaporation, the NWs exhibited n-type conducting behavior and a mobility of 15.9 cm 2 /V Á s at a gate voltage of 0.01 V [8,9]. The conducting behavior was attributed to the stacking faults or planar defects that acted as the intrinsic donors.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method

Zhao

2011

J Mater Sci: Mater Electron

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The b-SiC nanowires (NWs) prepared by a simple carbon template method exhibit two kinds of electrical transport properties, depending on their crystalline structures. A part of the NWs exhibit the resistivities as low as 1.5 9 10 -5 to 3 9 0 -4 X cm due to n-type doping from the intrinsic planar defects and stacking faults, forming Ohmic contact with Au electrodes; the other ones show a typical characteristic of the semiconductor with a remarkable increase in resistivity by 5-7 magnitude orders, owing to a nearly perfect single-crystalline structure with few intrinsic defects. Additionally, the electrical breakdown behavior is observed in the metallic NWs.

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Field-effect transistor based on /spl beta/-SiC nanowire

Cited by 77 publications

References 13 publications

SiC nanowires: material and devices

SiC nanowires: material and devices

Cubic SiC Nanowires: Growth, Characterization and Applications

Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method

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