Field effect in tellurium

Silbermann, R.; Landwehr, G.; Köhler, H.S.

doi:10.1016/0038-1098(71)90437-6

Cited by 14 publications

(5 citation statements)

References 2 publications

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“…Standard values of ε and m * /m e have been used here, as tabulated byMadelung (1996); our conclusions are not altered if we use instead the somewhat higher value of electron effective mass in Te, m * /m e = 0.12, cited bySilbermann et al (1971). Shallow donors typically ionize at a temperature equivalent to one tenth of their binding energy, thanks to the much greater density of states in the conduction band.…”

mentioning

confidence: 80%

“…It appears to do so in GaAs, for instance, though only in n-type material with hole capture as a minority process (Chow et al 1996). Te is naturally slightly p-type, with a low-T hole concentration of about 10 14 cm −1 (Silbermann et al 1971); this would tend to stabilize the positive ion, at least until the conductivity becomes intrinsic around 200 K. Since it is above 200 K that the chargeexchange relaxation sets in, both electron and hole processes are permitted, as well as participation of the negative ion. It is difficult to imagine an equilibrium between TeMu 0 and Mu + (which would effectively require abstraction analogous to reaction (63) to occur at each charge cycle) but there are two other possibilities which require little or no rearrangement of the local bonding.…”

Section: Intermittent Hyperfine Coupling In Telluriummentioning

confidence: 99%

“…The band-gaps of the common forms are 2.8 eV (S), 1.9 eV (Se) and 0.34 eV (Te). Se and Te are both naturally p-type: the hole concentrations are typically 10 15 -10 16 (Se) and 10 14 (Te) and no method of doping Se n-type has been found (Silbermann et al 1971, Smith 1979, Madelung 2004). As functional electronic materials, they have had their heyday.…”

Section: The Group VI or Chalcogen Semiconductors S Se And Tementioning

confidence: 99%

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Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2009

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Although the interstitial hydrogen atom would seem to be one of the simplest defect centres in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst the elements. In semiconductors, the realization that hydrogen can profoundly influence electronic properties even as a trace impurity has prompted its study by all available means-but still only in the functionally important or potentially important materials-for the elements, Si, Ge and diamond. Even here, it was not studies of hydrogen itself but of its pseudo-isotope, muonium, that first provided the much needed microscopic pictures of crystallographic site and local electronic structure-now comprehensively confirmed by ab initio computation and such data as exists for monatomic, interstitial hydrogen centres in Si. Muonium can be formed in a variety of neutral paramagnetic states when positive muons are implanted into non-metals. The simple trapped atom is commonly only metastable. It coexists with or reacts to give defect centres with the unpaired electron in somewhat more extended orbitals. Indications of complete delocalization into effective mass states are discussed for B, α-Sn, Bi and even Ge, but otherwise all the muonium centres seen in the elemental semiconductors are deep and relatively compact. These are revealed, distinguished and characterized by µSR spectroscopy-muon spin rotation and resonance informing on sites and spin-density distributions, muon spin relaxation on motional dynamics and charge-state transitions.This Report documents the progress of µSR studies for all the semiconductors and semimetals of the p-block elements, Groups III-VI of the Periodic Table . The striking spectra and originally unanticipated results for Group IV are for the most part well known but deserve summarizing and updating; the sheer diversity of muonium states found is still remarkable, especially in carbon allotropes. The interplay of crystallographic site and charge state in Si and Ge at high temperatures, or under illumination, reflects the capture and loss of charge carriers that should model the electrical activity of monatomic hydrogen but still challenges theoretical descriptions. Spin-flip scattering of conduction electrons by the paramagnetic centres is revealed in heavily doped n-type material, as well as some modification of the local electronic structures. The corresponding spectroscopy for the solid elements of Groups III, V and VI is rather less well known and is reviewed here for the first time; a good deal of previously unpublished data is also included. Theoretical expectations and computational modelling are sparse, here. Recent results for B suggest a relatively shallow centre with molecular character; P and As show deeper quasi-atomic states, but still with substantial overlap of spin density onto surrounding host atoms. Particular attention is paid to the chalcogens. Muonium centres in Te show charge-state transitions already around room temperature; the identification of those in S and Se has been compli...

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mentioning

confidence: 80%

Section: Intermittent Hyperfine Coupling In Telluriummentioning

confidence: 99%

Section: The Group VI or Chalcogen Semiconductors S Se And Tementioning

confidence: 99%

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Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2009

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“…Most informative are measurements where, a t high transverse field strength, a minimum of conductance is observed which indicates the formation of an inversion layer at the surface. This has been achieved in some cases for germanium and silicon [2] and, more recently, also for tellurium crystals [3]. Besides the calculation of the surface potential, such a minimum in principle allows the investigation of the carrier transport in the inversion layer.…”

Section: Introductionmentioning

confidence: 99%

Field effect on trigonal selenium crystals

Engemann

Fuhs

1972

Phys. Stat. Sol. (a)

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The field effect of trigonal selenium crystals is investigated as a function of temperature. The field mobility μF has the same temperature dependence as the conductivity and is of similar magnitude as the Hall mobility. This shows that surface states are of minor importance. At high values of the transverse voltage, the surface conductance exhibits a minimum which seems to indicate the formation of an inversion layer. The results are discussed in terms of a barrier model. It is shown that the minimum of conductance can be explained by a reduction of potential barriers at the surface in high electric fields.

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“…I n conclusion, this calculation shows that for a uniform distribution of surface states, only the states close to the band edges contribute to the impedance of interface. It corresponds to the distribution of surface states determined by Silbermann et al [4] and Lombard [5] for the tellurium surface. We must note too that such a distribution is found for the silicon-silicon dioxide interface a t room temperature.…”

mentioning

confidence: 96%

Influence of the recombination dynamics on the response of a continuum of surface states

Bredimas

Thuillier

1972

Phys. Stat. Sol. (a)

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The studies of the interface properties of MOS structures show that, in many cases, the density of surface states has two extrema near the band edges. Using a calculation, based on the Shockley‐Read model, it is found that for a constant distribution of the energy of surface states, states close to the band edges contribute appreciably to the surface impedance. This effect is more marked at low temperature.

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Field effect in tellurium

Cited by 14 publications

References 2 publications

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

Field effect on trigonal selenium crystals

Influence of the recombination dynamics on the response of a continuum of surface states

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