Influence of the recombination dynamics on the response of a continuum of surface states

Abstract

The studies of the interface properties of MOS structures show that, in many cases, the density of surface states has two extrema near the band edges. Using a calculation, based on the Shockley‐Read model, it is found that for a constant distribution of the energy of surface states, states close to the band edges contribute appreciably to the surface impedance. This effect is more marked at low temperature.