Field effect in epitaxial graphene on a silicon carbide substrate

Gu, Gong; Nie, Shu; Feenstra, R. M.; Devaty, Robert P.; Choyke, W. J.; Chan, W.K.; Kane, M.

doi:10.1063/1.2749839

Cited by 145 publications

(113 citation statements)

References 17 publications

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“…More importantly, the measured electron and hole mobilities on fabricated top-gate graphene field-effect transistors exceeds 5400 and 4400 cm 2 / V s, respectively. This is one order-of-magnitude higher than earlier reported 11 and approaches the values obtained from exfoliated graphene films. [6][7][8] The graphene films were grown on the carbon or silicon face of semi-insulating 4H-SiC substrates in an Epigress VP508 SiC hot-wall chemical vapor deposition ͑CVD͒ reactor.…”

supporting

confidence: 69%

“…The extracted electron effective mobility is as high as 5400 cm 2 / V s, one order of magnitude higher than the value reported in Ref. 11 and approaching values reported in exfoliated graphene films. [6][7][8] In contrast to Ref.…”

contrasting

confidence: 52%

“…Some attempts to address these issues were reported very recently, both on peeled graphene flakes 10 or SiC surfaces after graphitization. 11 In this letter, the observation of n-type and p-type transitions on epitaxially grown graphene films by top-gate bias is reported. More importantly, the measured electron and hole mobilities on fabricated top-gate graphene field-effect transistors exceeds 5400 and 4400 cm 2 / V s, respectively.…”

mentioning

confidence: 95%

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Capano

et al. 2008

Applied Physics Letters

211

149

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Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions’ unique transport properties in graphene layers. The measured electron and hole mobilities on these fabricated graphene FETs are as high as 5400 and 4400cm2∕Vs, respectively, which are much larger than the corresponding values from conventional SiC or silicon.

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supporting

confidence: 69%

contrasting

confidence: 52%

mentioning

confidence: 95%

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Capano

et al. 2008

Applied Physics Letters

211

149

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“…Epitaxial growth of graphene on semi-insulating (SI) SiC has the potential to enable next generation ultra high frequency and low power electronic devices [1][2][3][4][5][6]. The main advantage is the possibility to obtain large area graphene directly on SI substrates which is one of the main requirements for high frequency devices.…”

Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0001) The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions.Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm 2 /Vs) and low carrier density (<0.9x10 13 cm -2 ) in quasifree-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.

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“…The field effect of graphene is a very attractive subject [1,2,4,8]. Unfortunately, the electrode of the integrated nanogap probe made contact with the surrounding region of nanographene, where the withstand voltage is too low for field effect measurement.…”

Section: Conductance Measurement Of Few-layer Graphenementioning

confidence: 99%

Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe

Nagase¹,

Hibino²,

Kageshima³

et al. 2008

J. Phys.: Conf. Ser.

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Abstract. We report the first measurement of spatially resolved in-plane conductance of fewlayer (one-or two-layer) graphene grown on a SiC substrate, measured using an integrated nanogap probe. The morphology and number of layers of the thermally grown graphene were confirmed by in-situ observation using low energy electron microscopy (LEEM). The gap current (conductance) images were measured using an integrated nanogap probe with a 30-nmgap on a conventional SPM system in vacuum. Island shapes with a typical width of 30 nm were clearly observed in the conductance image. Single-and double-layer graphene islands could be clearly distinguished, because the conductance of double-layer graphene is about four times that of single-layer graphene. The layer number of few-layer graphene has been successfully estimated from the electrical transport measurement using the integrated nanogap probe. IntroductionFew-layer graphene has recently attracted much attention as a new electronic material with interesting electronic transport properties, such as field effects and quantum hall effects [1,2]. There have been many theoretical discussions about how the electronic structure of graphene depends on its microscopic geometry [3]. However, it is very difficult to measure the electrical properties of the nano-order graphene assumed by theorists. A fabrication technique that offers atomically precise control of graphene shape has not been established [4]. We try another method based on scanning probe microscopy (SPM) to measure the electronic transport properties of nano-order graphene instead of the conventional method, which involves the fabrication of a nanodevice. In the method, a local conductance of few-layer graphene on SiC substrate is measured using an integrated nanogap probe consisting of two Pt electrodes separated by a nano-order gap fabricated by focused ion beam milling of a Si cantilever. This integrated nanogap probe on a SPM system enables us to measure in-plane conductance with nanometer resolution without lithographic techniques [5,6]. Our goal in this work was to measure the local conductance of few-layer graphene with nanometer spatial resolution. In this paper, we report, for the first time, spatially resolved in-plane conductance of one-or two-layer nanographene grown on a SiC substrate.

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Field effect in epitaxial graphene on a silicon carbide substrate

Cited by 145 publications

References 17 publications

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe

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