Top-gated graphene field-effect-transistors formed by decomposition of SiC

Wu, Yanqing; Ye, P. D.; Capano, Michael A.; Xuan, Yi; Yang, Sui; Qi, Minghao; Cooper, James A.; Shen, Tian; Pandey, Deepak; Prakash, G. K. Surya; Reifenberger, R.

doi:10.1063/1.2889959

Cited by 211 publications

(155 citation statements)

References 24 publications

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“…Several 100 μm 2 Van der Pauw structures are fabricated on graphene grown on both SI SiC substrates and on n-type homoepitaxial layers of SiC [34]. Measurements of the Hall properties of these structures yield valuable information about the uniformity of the electron transport properties in large area epitaxial graphene layers.…”

Section: Electrical Characterizationmentioning

confidence: 99%

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0001) The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions.Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm 2 /Vs) and low carrier density (<0.9x10 13 cm -2 ) in quasifree-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.

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Section: Electrical Characterizationmentioning

confidence: 99%

“…Epitaxial growth of graphene on semi-insulating (SI) SiC has the potential to enable next generation ultra high frequency and low power electronic devices [1][2][3][4][5][6]. The main advantage is the possibility to obtain large area graphene directly on SI substrates which is one of the main requirements for high frequency devices.…”

Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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“…The drain current can be modulated by ~46% with a few volts gate bias, similar to the previous work with SiO 2 as gate dielectric. 5 The device cannot be turned off due to the zero-bandgap of graphene films. The monotonic reduction in drain current with negative gate bias confirms that the carriers in graphene films on SiC (0001) are n-type.…”

mentioning

confidence: 99%

“…However, this exfoliation process cannot form the basis for a large-scale manufacturing process. Recent reports of large-area epitaxial graphene by thermal decomposition of SiC wafers have provided the missing pathway to a viable electronics technology [4][5][6][7][8][9] . An interesting question that remains to be addressed is whether the electrical properties of epitaxial graphene on SiC are essentially same as those in exfoliated graphene films.…”

mentioning

confidence: 99%

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Shen¹,

Gu²,

Xu³

et al. 2009

Applied Physics Letters

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119

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Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).

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“…However, graphene has a fundamental disadvantage for electronic devices, which is the lack of an intrinsic band gap. This has resulted in several reports of insufficient on/off current ratio of field-effect transistors (FETs) [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Influence of post-annealing on the off current of MoS2 field-effect transistors

Namgung¹,

Yang²,

Park³

et al. 2016

Nano Online

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Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS 2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS 2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS 2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H 2 O and O 2 .

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Cited by 211 publications

References 24 publications

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Influence of post-annealing on the off current of MoS2 field-effect transistors

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