2015
DOI: 10.1016/j.electacta.2015.06.121
|View full text |Cite
|
Sign up to set email alerts
|

Field - dipole interactions in L-cysteine-thiolate self assembled at p- and n-GaAs(100) electrodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
12
0
1

Year Published

2016
2016
2020
2020

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 7 publications
(14 citation statements)
references
References 60 publications
1
12
0
1
Order By: Relevance
“…Since the usual chemical shift, ΔBE is 1.4 ± 0.3 eV at As−S species and around 0.6 eV at Ga−S species, the first one can be easily discerned in the XPS spectra whereas the latter one manifests itself as a slight broadening of the Ga (3d) peak . As seen in Figure , the value of the I As‐3d5/2 / I Ga‐3d5/2 ratio is lower at the p‐doped substrate (1.30±0.01) than at the n‐doped one (1.45±0.01), suggesting that the adsorption of the cysteine in ethanol solution involves rather As‐sites at p‐doped and Ga‐sites at n‐doped GaAs(1 0 0), respectively, as previously found for the films formed in aqueous solutions . This conclusion is further supported by the higher weight of the As−S species observed at the p‐doped sample (7.3 %) than that found at the n‐doped one (4.7 %) as well as the higher value of the full width at half maximum (FWHM) parameter of the Ga‐3d 5/2 and Ga‐3d 3/2 components at the n‐doped sample (1.16 eV) than at the p‐doped one (1.05 eV).…”
Section: Resultsmentioning
confidence: 90%
See 2 more Smart Citations
“…Since the usual chemical shift, ΔBE is 1.4 ± 0.3 eV at As−S species and around 0.6 eV at Ga−S species, the first one can be easily discerned in the XPS spectra whereas the latter one manifests itself as a slight broadening of the Ga (3d) peak . As seen in Figure , the value of the I As‐3d5/2 / I Ga‐3d5/2 ratio is lower at the p‐doped substrate (1.30±0.01) than at the n‐doped one (1.45±0.01), suggesting that the adsorption of the cysteine in ethanol solution involves rather As‐sites at p‐doped and Ga‐sites at n‐doped GaAs(1 0 0), respectively, as previously found for the films formed in aqueous solutions . This conclusion is further supported by the higher weight of the As−S species observed at the p‐doped sample (7.3 %) than that found at the n‐doped one (4.7 %) as well as the higher value of the full width at half maximum (FWHM) parameter of the Ga‐3d 5/2 and Ga‐3d 3/2 components at the n‐doped sample (1.16 eV) than at the p‐doped one (1.05 eV).…”
Section: Resultsmentioning
confidence: 90%
“…This hybrid bio‐solid‐state electro‐optical device can be used as a photo‐sensor. According to our previous results, the PS I could be directly attached to the GaAs surfaces through the thiol group of the cysteine instead of using N‐ϵ‐maleimidocaproic acid or N‐β‐maleimidopropionic acid as linkers. The configuration of the adsorbed species is thus important, and any information in this respect very useful.…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…Several studies have emphasized that the presence of surface oxides and the corresponding microstructure plays an important role on the adsorption of L‐cysteine and inhibition efficiency . Electrochemical results show that the specimen surface presents distinct photovoltaic effect, implying the existence of oxide layer on the specimen surface.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the corresponding surface electronic state must exert a significant effect on the adsorption mode of the adsorbed L‐cysteine and inhibition efficiency consequently. L‐cysteine adsorption behavior on p ‐ and n ‐GaAs (gallium arsenide) semiconductor surface without considering its corrosion inhibition performance have been characterized . However, to the best of our knowledge, few studies have focused on the preferential bonding of L‐cysteine on steel in neutral media under illumination and its effect on the substrate corrosion resistance.…”
Section: Introductionmentioning
confidence: 99%