2017
DOI: 10.1016/j.electacta.2016.12.156
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Combined Electrochemical Impedance Spectroscopy, X-ray Photoelectron Spectroscopy, and Atomic Force Microscopy study of the distinct behavior of L-cysteine-thiolate formed at p- and n-GaAs(100) electrodes in Sodium Dodecyl Sulfate solution

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Cited by 3 publications
(6 citation statements)
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“…The distinct electrochemical behavior of the p-and n-GaAs(100) electrodes covered with L-cysteine-thiolate observed in sulfuric acid solutions 9,10 pointed as well to different dopant-induced surface states as being involved in. Dopants were found to play a key role in driving the particular bonding of this organic molecule, preponderant on As sites at p-doped, and on Ga sites at the n-doped substrate, as the XPS data revealed.…”
mentioning
confidence: 99%
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“…The distinct electrochemical behavior of the p-and n-GaAs(100) electrodes covered with L-cysteine-thiolate observed in sulfuric acid solutions 9,10 pointed as well to different dopant-induced surface states as being involved in. Dopants were found to play a key role in driving the particular bonding of this organic molecule, preponderant on As sites at p-doped, and on Ga sites at the n-doped substrate, as the XPS data revealed.…”
mentioning
confidence: 99%
“…STM investigations revealed indeed that dopant atoms and antisite defects have a close relationship. [11][12][13] This conclusion was strengthened by the experiments performed in sodium dodecyl sulfate (SDS) solutions 10 which showed that anionic surfactant is involved in a chemical bond only with the Ga atoms available on L-cysteinecoated GaAs(100) electrodes, observed to be in a higher amount at the p-doped electrode.…”
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confidence: 99%
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“…Among the amino acids in the biological systems, only L‐cysteine contains a free thiol moiety, and plays an important role in the physiological functions such as maintaining the stability of protein, strengthening the immune system, and delaying senescence . A low or high L‐cysteine level can have serious adverse effects on the bodily functions.…”
Section: Introductionmentioning
confidence: 99%
“…The further examination of the hemin-covered GaAs electrodes by second harmonic generation, X-ray photoelectron spectroscopy and atomic force microscopy pointed to a possible change in the spin conguration of the iron ions preceding the charge transfer step originating in the mutual interactions between solvent, hemin and surface sites. 12 Since surface states and eld effects were found to depend signicantly at GaAs electrodes on both the surface orientation and the charge carrier type, [14][15][16][17] the comparison between the redox behaviour of hemin on Siand Zn-doped GaAs(100) in the same electrolyte should give a good hint about the role played by the charge carrier type in this charge transfer process. It is the aim of this paper to present the results of our electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) investigations in this respect.…”
Section: Introductionmentioning
confidence: 99%