Field dependent permittivity in metal-semiconducting SrTiO3 Schottky diodes

Abstract

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Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions

“…For electric fields larger than 100 kV/cm, ⑀ r decreases from 350 to about 20 at 10 4 kV/cm. The field dependence of ⑀ r is similar to that observed for the Hg/STNO diodes reported by Berg et al 28 As shown in Fig. 6, we found that the field dependence of the permittivity of our junctions can be expressed as…”

“…͑4͒, we can see that this anomalous behavior of 1/C 2 ϪV a characteristics originates in the distribution of either donor concentration or permittivity as a function of depth. There have been several reports on the electric field dependence of permittivity of oxide-perovskite materials, [25][26][27][28] which dependence was expressed using a polarization saturation by Kahng et al 26 This field dependence gives rise to the modification of the C -V characteristics of a Schottky diode. In this study, supposing for simplification that donor distribution in the depletion layer is uniform, we analyzed the C -V characteristics with the model that took into account the field dependence of permittivity.…”

Profiling the Interface Electron Gas ofLaAlO3/SrTiO3Heterostructures with Hard X-Ray Photoelectron Spectroscopy

“…Using qualitative textbook arguments one expects a decrease of the space charge region with decreasing dielectric constant and increasing charge carrier concentration. The dielectric constant of SrTiO 3 strongly decreases with increasing electric field [24]. From this and the charge carrier densities given in Table I, in a band-bending scenario, the interface thickness should decrease with the number of LAO overlayers, wheras the opposite trend is observed (Table I).…”

Thermally assisted tunneling transport in La0.7Ca0.3MnO3/SrTiOCuellar1, Sánchez-Santolino2, Varela3 et al. 2012Phys. Rev. B190110View full textAdd to dashboardCite

“…28 It has also been shown previously that under a high electric field of the order of 10 7 -10 8 V/m, like that expected in the space-charge region close to the interface with LCMO, the permittivity can be much lower, and although the temperature dependence of ε r under such high electric fields is not well established, it has been reported that it still shows a slight increase when the temperature decreases. 29 Thus we have fitted E 0 in Fig. 4 at each temperature by using Eq.…”