Field and photo-field electron emission from self-assembled Ge–Si nanostructures with quantum dots

ZnO Nanowires Modified with Au Nanoparticles Exhibiting High Field-Emission Performance

“…Figure 5c schematically depicts the band diagram of ZnO NW with Au NPs under dark condition and a potential well, which is correspond to Au NP, is assumed to be confined by the Au-ZnO interface from one side and by the surface barrier (Au electron affinity) from the other side. 21 When an electric field is applied, the potential well collects much more electrons than pure ZnO NWs and increases tunneling behavior. Additionally, the size of Au NPs is much smaller than each ZnO NW, most of excited electrons concentrated at the NPs and emits easily due to owing to point discharge phenomenon.…”

Photoresponse in Ge/Si nanostructures with quantum dots

“…On the (100) oriented 7.5 Ohm⋅cm n-Si substrate, grown was a thin Ge layer that was covered with the surface Si layer of the thickness 20 to 40 nm. This procedure was recycled 5 times [16]. To have an opportunity to control the size and the surface density of QDs by the AFM method, the Ge layer was grown in the end of these procedures.…”

A miniaturized power source using electron stimulated impact ionization field emission

“…Since there is no potential difference between FEPC cathode and anode, the electron-hole pairs generated at FEPC cathode due to the constant bombardment of the external electrons, recombine. 10 Overall, the integrated e-beam delivered a total current ͑I Ext =I ExtC +I ExtA ͒ of ϳ12.5 nA at V Ext = −1.8 kV, Fig. 3͑a͒.…”

“…The reason being, the conduction band electrons start tunneling into vacuum only at a certain applied electric field. 10 Thus after the FEPC has turned-on, the current through the resistor R c ͑I Rc ͒ is the resultant of two current components, i.e., I Rc =I ExtC~IAC where I AC =I FEC +I g . Also, I Rc changed its direction and total anode current ͑I Ra ͒ increased exponentially with increasing FEPC cathode bias, Fig.…”