FIB Micro-Pillar Sampling Technique For 3D Stem Observation And Its Application

Yaguchi, Toshie; Konno, Mitsuru; Kamino, Takeo; Hashimoto, T.; Onishi, T.; Umemura, K.; Asayama, K.

doi:10.1017/s1431927603440117

Cited by 10 publications

(4 citation statements)

References 1 publication

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“…The FIB-STEM compatible specimen rotation holder has a needle stub at the center of the gear that is equipped at the holder tip and has a minimum rotation angle of 1degree. With the STEM used for this experiment, 360-degrees rotation and tilting by plus and minus 15 degrees is available [3][4][5]. For SEM (SEM: scanning electron microscope) observation, S-4800 SEM is used.…”

Section: Instrumentmentioning

confidence: 99%

ArF photo resist pattern sample preparation method using FIB without protective coating

et al. 2006

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This paper presents a novel method of FIB (FIB: focused ion beam) sample preparation to accurately evaluate critical dimensions and profiles of ArF photo resist patterns without the use of a protective coating on the photo resist. In order to accomplish this, the FIB micro-sampling method [1] that is one of effective FIB milling and fabrication method was employed. First a Si cap is picked up from a silicon wafer and fixed to ArF photo resist patterns to protect against ion beam irradiation. Then, a micro-sample, a piece of Si-capped ArF photo resist, was extracted from the bulk ArF photo resist. In this procedure, this silicon cap always protects ArF photo resist patterns against ion beam irradiation. For the next step, the micro-sample is fixed to a needle stub of the FIB-STEM (STEM: scanning transmission electron microscopy) compatible rotation holder. This sample on the needle stub was rotated 180 degrees and milled from the side of Si substrate. Lastly, the sample is milled to the thickness of 2 µm. In this process, the ion beam is irradiating from the silicon substrate side to minimize the ion beam irradiation damages on the ArF photo resist patterns. EDX (EDX: Energy dispersive X-ray spectroscopy) analysis proved that no gallium ions were detected on the surface of the ArF photo resist patterns. The feasibility of high accelerating voltage observation of STEM to observe line edge roughness of a thick sample like 2 µm without shrinkage has been demonstrated.

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Section: Instrumentmentioning

confidence: 99%

ArF photo resist pattern sample preparation method using FIB without protective coating

et al. 2006

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“…This results in a less comprehensive understanding of failure structures. To address the above mentioned difficulties, we used the FIB/STEM system equipped with compatible sample rotation holder which allows fast and easy sample preparation [4][5].…”

mentioning

confidence: 99%

Advanced Physical Failure Analysis Techniques Using 3D Rotation Imaging from Plane-View TEM Sample

Kang¹,

Gwak²,

Park³

et al. 2011

Microsc Microanal

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Dual beam focused ion beam (DB FIB) systems have been widely used for transmission electron microscopy (TEM) samples preparation in failure analysis for semiconductor device [1][2]. However, the sampling size of TEM sample is very limited, particularly for a cross-section and threedimensional (3D) sample. Therefore failure area by electrical test is usually too large to give accurate defect location. As a result, the failure site must be accurately located before FIB milling to prevent from missing target. FIB technique for dual-direction TEM analysis using both plane-view and crosssection samples from the same site previously has been reported because the plane-view sample has large area of inspection and therefore allows one easily capture the failure site [3]. However it would be difficult to prepare TEM sample since this technique needs attach and detach processes several times. It is also difficult to prepare samples for plane-view and 3D TEM observation which would be an effective method to resolve the physical failure analysis. This results in a less comprehensive understanding of failure structures. To address the above mentioned difficulties, we used the FIB/STEM system equipped with compatible sample rotation holder which allows fast and easy sample preparation [4][5].In this work, we newly developed FIB sample preparation techniques where both plane-view and cross-sectional sample are performed on a single STEM specimen using rotation holder. We also demonstrated advanced techniques of plane-view and 3D STEM sample from the same site. FIG. 1 and FIG.2 show schematic drawing of FIB sample preparation for cross-sectional and 3D sample from plane view sample, respectively. FIB sample preparation was used by Hitachi NB-5000 FIB equipped with compatible sample rotation holder which allows a 360-degree rotation of the sample both the FIB system and the TEM/STEM. The cross sectional and 3D STEM observations were performed with Hitachi HD2700 . FIG. 3 shows TEM image of (a) plane-view and 3D observation at different rotation angles with (b) 0, (c) 90, (d) 180 degrees prepared from plane-view sample. It has been confirmed that the failure is due to silicon substrate dislocations which could induce leakage current.

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“…In the fields of electronic devices and nano-materials, demands for three dimensional (3D) imaging are increasing rapidly. Recently, we have developed a method for multi-directional observation of a specific site at atomic level resolution [1], [2]. In this method, the specimen is prepared using the FB-2100 focused ion beam (FIB) system equipped with a FIB micro-sampling system [3], [4] and a FIB-scanning transmission electron microscopy (STEM) / transmission electron microscopy (TEM) compatible specimen rotation holder.…”

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confidence: 99%

A Method for 3 Dimensional Structural and Compositional Imaging of Nano-materials

et al. 2006

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FIB Micro-Pillar Sampling Technique For 3D Stem Observation And Its Application

Cited by 10 publications

References 1 publication

ArF photo resist pattern sample preparation method using FIB without protective coating

ArF photo resist pattern sample preparation method using FIB without protective coating

Advanced Physical Failure Analysis Techniques Using 3D Rotation Imaging from Plane-View TEM Sample

A Method for 3 Dimensional Structural and Compositional Imaging of Nano-materials

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