2009
DOI: 10.1016/j.jmmm.2008.09.016
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Ferromagnetism of Mn-doped GaN polycrystalline powders

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Cited by 31 publications
(3 citation statements)
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References 26 publications
(34 reference statements)
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“…There have been many reports on roomtemperature ferromagnetism for wide bandgap semiconductor doped with a few percent of 3d transition-metal ions. The host materials for the DMS have been ZnO [1,[4][5][6], ZnS [2,[7][8][9][10][11][12], TiO 2 [13,14], SnO 2 [15,16], GaAs [17], AlN [18], and GaN [19]. TM-doped DMS materials always suffer from problems such as formation of secondary phase and/or clusters [2].…”
Section: Introductionmentioning
confidence: 99%
“…There have been many reports on roomtemperature ferromagnetism for wide bandgap semiconductor doped with a few percent of 3d transition-metal ions. The host materials for the DMS have been ZnO [1,[4][5][6], ZnS [2,[7][8][9][10][11][12], TiO 2 [13,14], SnO 2 [15,16], GaAs [17], AlN [18], and GaN [19]. TM-doped DMS materials always suffer from problems such as formation of secondary phase and/or clusters [2].…”
Section: Introductionmentioning
confidence: 99%
“…As reported by Li et al, 16,17 very low doping contents of Mn in Mn-doped GaN and AlN could not produce intrinsic FM without the aid of defects. Similarly, the defects in the sample are also believed to play a significant role for the FM.…”
mentioning
confidence: 68%
“…However, non-magnetic doped or undoped DMSs usually exhibit weak FM features that limit their practical applications and thus, much effort is still required to obtain high-quality TM-doped DMSs with a high T c [2,17,18]. Towards this aim, many research groups have tried to solve these challenges for TM-doped DMSs, including bulk or film materials [19][20][21]. Unfortunately, a solution for these challenges is still lacking, in particular for SiC-based DMSs.…”
Section: Introductionmentioning
confidence: 99%