2011
DOI: 10.1063/1.3665258
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Local structure and magnetic properties of Mn-doped 3C-SiC nanoparticles

Abstract: Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gelhydrothermal technique

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Cited by 33 publications
(4 citation statements)
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“…% Mn-doped SiC films annealed at 1200 C, which can be resolved into two components at 282.7 and 283.5 eV, corresponding to the C-Si bond and C-C bond, respectively. Recently, Zheng et al 20 determined the accurate location of Mn atoms in the Mn-doped 3C-SiC by extended x-ray absorption fine structure and revealed the Mn atoms substituted for C sites in 3C-SiC lattice. With the doped Mn concentration increasing, the peak strengths of Si-C bond become weaker and those of C-C bond become stronger.…”
Section: Resultsmentioning
confidence: 99%
“…% Mn-doped SiC films annealed at 1200 C, which can be resolved into two components at 282.7 and 283.5 eV, corresponding to the C-Si bond and C-C bond, respectively. Recently, Zheng et al 20 determined the accurate location of Mn atoms in the Mn-doped 3C-SiC by extended x-ray absorption fine structure and revealed the Mn atoms substituted for C sites in 3C-SiC lattice. With the doped Mn concentration increasing, the peak strengths of Si-C bond become weaker and those of C-C bond become stronger.…”
Section: Resultsmentioning
confidence: 99%
“…50,51 Alternatively, nanosized SiC may be synthesized by sol-gel and carbothermal reduction methods together with the desired dopant as was demonstrated for manganese-doped cubic SiC nanoparticles. 52…”
Section: Resultsmentioning
confidence: 99%
“…Irregular distribution of In-based nanoclusters has been detected at the GaN/InN and InGaN/AlGaN interfaces with an estimated diameter of ~1-2 nm. To probe the optical, structural, and electrical attributes of compound semiconductors, it has been a customary tradition to instigate a variety of characterization techniques, including reflectivity, absorption [24][25][26][27], high-resolution X-ray diffraction (HR-XRD) [28][29][30][31][32][33][34], extended X-ray absorption fine structures (EXAFs) [35][36][37][38][39][40], photoluminescence (PL) [41][42][43], secondary ion mass spectroscopy [20][21][22][23][24][25][26][27][28] (SIMS), spectroscopic ellipsometry (SE) [28], electron-energy loss (EEL) [43,44] measurements, etc. Other experimental methods such as electron paramagnetic resonance (EPR) and far-infrared (FIR) spectroscopy [21][22][23] are also considered valuable for probing the nature of electronic centers, as well as assessing nanostructured interfacial components by evaluating their vibrational and/or electronic properties .…”
Section: Introductionmentioning
confidence: 99%