Ferromagnetic states of p-type silicon doped with Mn

Yunusov, Ziyodbek A.; Yuldashev, Sh. U.; Igamberdiev, Kh. T.; Kwon, Yongchai; Kang, Tae Won; Бахадырханов, М. К.; Исамов, С. Б.; Зикриллаев, Н. Ф.

doi:10.3938/jkps.64.1461

Cited by 12 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Therefore, it can be argued that silicon materials with binary nanoclusters can be used as promising materials for photovoltaic energetics, allowing them to create more efficient photovoltaic cells [18] [19] [20] replacing expensive multicascade structures on their basis. This can be proved by the results of a study of photovoltaic cells with binary clusters of SMn composition.…”

Section: Resultsmentioning

confidence: 99%

Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Bakhadyrhanov¹,

Sodikov²,

Melibayev³

et al. 2018

MSCE

View full text Add to dashboard Cite

The paper presents unique functional capabilities of silicon with nanoclusters of impurity atoms with various characters. It is shown that, depending on the nature of the clusters, it is possible to expand the spectral diapason of sensitivity towards the IR region and obtain silicon with anomalously high negative magnetoresistance (Δρ/ρ > 100%) at room temperature. The formation of clusters of impurity atoms with different nature and concentration in the lattice of semiconductor materials is a new approach for obtaining bulk-nanostructured silicon with unique physical properties.

show abstract

Section: Resultsmentioning

confidence: 99%

Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Bakhadyrhanov¹,

Sodikov²,

Melibayev³

et al. 2018

MSCE

View full text Add to dashboard Cite

show abstract

“…It is established that in the produced PV cells starting from 3.5 μm there is a significant increase in the short-circuit current and the idling voltage. These data indicate that it is possible to create PV cells with characteristics similar to multi-stage solar cells based on A III B V [17][18][19][20][21] .…”

Section: Discussionmentioning

confidence: 99%

Perspective Material for Photoenergetics on the Basis of Silicon with Binary Elementary Cells

et al. 2018

Self Cite

View full text Add to dashboard Cite

The paper proposes a scientifically-grounded, principally-new approach to managing the fundamental parameters of the basic material of electronic engineering as like silicon. The essence of the proposed approach is the formation of binary elementary cells in the silicon lattice involving elements III (B, Al, Ga, Zn) and V (P, As, Sb) groups in the form of Si2GaAs, Si2GaSb, etc. Taking electrical and chemical parameters of these impurity atoms into account, as well as their diffusion parameters in Si, the formation is determined by the most suitable pairs of atoms of groups III and V that allow obtaining silicon with the necessary composition and structure of binary elementary cells, as well as their more complex associations, up to the formation of nanocrystals of semiconductor connections AIIIBV. It is shown that by controlling the composition, structure and concentration of binary elementary cells, it is possible to significantly expand the spectral sensitivity of silicon, both in the IR and hλ > Eg directions. The formation of nanoclusters of AIIIBV semiconductor compounds in the silicon lattice significantly changes the emissivity of the material. It is established that the successive diffusion of elements of groups III and V in silicon and additional low-temperature annealing under certain thermodynamic conditions make it possible to ensure the maximum participation of the impurity atoms introduced in the formation of binary elementary cells. Silicon with binary elementary cells involving atoms of groups III and V is a new class of semiconductor material with unique functionality for modern optoelectronics and photoenergetics.

show abstract

“…1, a) однозначно свидетельствуют о наличии нанокластеров, содержащих в своем составе четыре атома марганца (Mn) 4 . Эти результаты являются прямым доказательством образования магнитных кластеров примесных атомов в решетке кремния [8][9][10]. Примесные атомы марганца являются парамагнитными центрами со спином S = 5/2 (3d 5 4s 0 ), и в зависимости от условий легирования могут находиться в кристаллической решетке кремния в состояниях Mn 0 (3d 5 4s 2 ), Mn…”

Section: теоретический анализunclassified

Кремний С Магнитными Нанокластерами Атомов Марганца --- Новый Класс Фотомагнитных Материалов

Бахадырханов¹,

Илиев²,

Мавлонов³

et al. 2019

Журнал Технической Физики

View full text Add to dashboard Cite

Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a significant decrease in the NMR (NMR suppression) and sign inversion of the NMR at higher radiation intensities. Regularities of variations in the NMR and conditions for sign inversion are determined.

show abstract

Ferromagnetic states of p-type silicon doped with Mn

Cited by 12 publications

References 13 publications

Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Perspective Material for Photoenergetics on the Basis of Silicon with Binary Elementary Cells

Кремний С Магнитными Нанокластерами Атомов Марганца --- Новый Класс Фотомагнитных Материалов

Contact Info

Product

Resources

About