Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Bakhadyrhanov, M. K.; Sodikov, U.X.; Melibayev, D.; Wumaier, Tuerdi; Koveshnikov, S.; Khodjanepesov, K. A.; Zhan, Jiangxiang

doi:10.4236/msce.2018.64017

Cited by 11 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…В последние 10−15 лет ученые кафедры " Цифровая электроника и микроэлектроника" ТГТУ занимаются возможностью управления фундаментальными параметрами кремния [12][13][14]. Ученым этой кафедры удалось физически обосновать оригинальную и доступную технологию получения кремния с управляемыми фундаментальными параметрами.…”

Section: физические основы формирования бинарных элементарных ячеек в решетке кремнияunclassified

“…Полученные данные соответствуют литературным данным [12][13][14]. Как видно из рисунка, концентрационное распределение фосфора и галлия при их диффузии по отдельности существенно отличаются друг от друга.…”

Section: Nanocrystals Ofunclassified

See 1 more Smart Citation

Физические Основы Формирования Гетероваризонной Структуры На Основе Кремния

Бахадирханов¹,

Исамов²

2021

Журнал Технической Физики

View full text Add to dashboard Cite

With the formation of binary unit cells based on the AII and BVI, AIII, and BV elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 μm. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with λ = 0.1-3 μm, i.e., it covers the entire solar spectrum.

show abstract

Section: физические основы формирования бинарных элементарных ячеек в решетке кремнияunclassified

Section: Nanocrystals Ofunclassified

Физические Основы Формирования Гетероваризонной Структуры На Основе Кремния

Бахадирханов¹,

Исамов²

2021

Журнал Технической Физики

View full text Add to dashboard Cite

show abstract

“…-allows you to control the charge state of nanoclusters in a wide range (N+(-)n, where n>3), that is, to create multiply charged centers in a semiconductor, which are the basis for a very promising material for nanophotonics [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

Saitov

2022

phst

View full text Add to dashboard Cite

Currently, there is a growing need for high-performance photocells with increased stability of parameters to external influences, such as thermal and radiation resistance. This work is devoted to the study of photocells available in the volume of an ordered micro-and nanostructure based on silicon doped with impurity nickel atoms. The study of the formation of micro-and nanoclusters of impurity atoms in silicon photocells that were subjected to additional high-temperature processing makes it possible to determine the degradation of nickel clusters, which strongly affect the electrical parameters of photocells. It is shown that impurity nickel atoms will increase the stability of the electrophysical parameters of photocells under the influence of both high temperature and radiation. The results obtained in the study showed that the introduction of nickel impurity atoms into the volume of silicon-based photocells leads to temperature and radiation resistance, and also increases efficiency.

show abstract

“…Currently, in the field of physics of semiconductors the activities aimed at engineering a novel type of material by forming clusters on the surface and in the bulk silicon material that change its fundamental parameters are in great demand. The development of a technology for the formation of clusters of impurity atoms, which allows one to create nanoscale structures in a crystal bulk with a sufficiently high concentration and given composition, structure, and physical parameters, is one of the main tasks of modern microelectronics [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Study of Formation of Clusters of Atoms of Gadolinium in Silicon

Egamberdiyev¹,

Тачилин²,

Toshev³

et al. 2020

jcr

View full text Add to dashboard Cite

The paper presents technology for a phased low-temperature diffusion doping of silicon with gadolinium that helps engineer clusters of impurity atoms distributed across the entire bulk material. The authors have shown that no surface erosion or formation of alloys and silicides on the surface are detected while applying low temperature diffusion technology which normally takes place during high-temperature diffusion doping. The authors revealed the increased thermal and radiation resistance of silicon samples containing clusters of impurity atoms of gadolinium.

show abstract

Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

Cited by 11 publications

References 13 publications

Физические Основы Формирования Гетероваризонной Структуры На Основе Кремния

Физические Основы Формирования Гетероваризонной Структуры На Основе Кремния

Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

Study of Formation of Clusters of Atoms of Gadolinium in Silicon

Contact Info

Product

Resources

About