2016
DOI: 10.1038/srep19965
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Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

Abstract: We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on… Show more

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Cited by 36 publications
(20 citation statements)
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References 41 publications
(81 reference statements)
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“…A similar increase of T max and decrease of ΔT disp has been previously reported as a result of compressive strain in relaxor thin films [30][31][32], and has been related to changes of the correlation length and polar nanoregion morphology, and the direction of dipoles within them [30][31][32][33][34]. To examine whether defect-induced changes in the morphology of the local-polar order are responsible for the weakening of the relaxor response, a series of twodimensional reciprocal space mapping studies was conducted (Supplemental Material, Figs.…”
supporting
confidence: 86%
“…A similar increase of T max and decrease of ΔT disp has been previously reported as a result of compressive strain in relaxor thin films [30][31][32], and has been related to changes of the correlation length and polar nanoregion morphology, and the direction of dipoles within them [30][31][32][33][34]. To examine whether defect-induced changes in the morphology of the local-polar order are responsible for the weakening of the relaxor response, a series of twodimensional reciprocal space mapping studies was conducted (Supplemental Material, Figs.…”
supporting
confidence: 86%
“…While the use of epitaxial constraints to manipulate ferroelectric order has been widely demonstrated, [25][26][27] little of that work has focused on relaxors. [28][29][30][31][32] Theoretical studies have proposed that strain can significantly alter the morphologies of local-polar order and the direction of dipoles within them. [28] But experimental studies have provided contradicting observations of the effect of epitaxial strain [29][30][31][32] ; some suggest that compressive strain increases T m [29,30] and induces ferroelectricity [31] while others claim that compressive strain decreases T m and favors the relaxor state.…”
mentioning
confidence: 99%
“…[28][29][30][31][32] Theoretical studies have proposed that strain can significantly alter the morphologies of local-polar order and the direction of dipoles within them. [28] But experimental studies have provided contradicting observations of the effect of epitaxial strain [29][30][31][32] ; some suggest that compressive strain increases T m [29,30] and induces ferroelectricity [31] while others claim that compressive strain decreases T m and favors the relaxor state. [32] These discrepancies likely arise from the use of partially relaxed (i.e., inhomogeneously strained) films [33] and from insufficient study of essential relaxor characteristics (e.g., local correlations and dynamics, diffuse-scattering, frequency dispersion of T m , etc.).…”
mentioning
confidence: 99%
“…[10][11][12][13][14][15] Despite the great attention received by PMN-PT in thin lm form, in particular for energy harvesting, energy storage and cooling applications, [16][17][18][19][20][21] there is still a lack of knowledge regarding epitaxial thin lms, particularly concerning correlations between the local atomic structure/strain and physical properties. 10,[22][23][24][25][26][27] Thus, understanding of the domains in relaxor ferroelectric thin lms and their evolution under external parameters such as epitaxial strain is crucial for practical applications. While strain engineering in ferroelectric and multiferroic thin lms is known to be a powerful route to control, tune, and enhance the functional properties and also create/induce new exotic properties that do not exist in bulk, [28][29][30] few studies have been done on the effect of strain in relaxor ferroelectrics.…”
Section: Introductionmentioning
confidence: 99%
“…While strain engineering in ferroelectric and multiferroic thin lms is known to be a powerful route to control, tune, and enhance the functional properties and also create/induce new exotic properties that do not exist in bulk, [28][29][30] few studies have been done on the effect of strain in relaxor ferroelectrics. 10,23,31,32 Note that control of the epitaxial strain at the atomic level and the profound understanding of its effect on the structural characteristics require samples of high quality, free from inactive pyrochlore phases. However, due to the compositional complexity of PMN-PT, the synthesis of pyrochlore free phases is known to be challenging.…”
Section: Introductionmentioning
confidence: 99%