Ferroelectric Switching Dynamics and Pulse-Switching Polarization Measurements

Song, Tae Kwon; So, Y. W.; KIM, D. J.; Jo, Ji Young; Noh, Tae Won

doi:10.1080/10584580500413871

Cited by 4 publications

(3 citation statements)

References 7 publications

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“… termination resistor, which is close to the minimum switching time found in other works for samples with similar composition and smaller contact pads [35]. It is smaller than the measured characteristic time scales and thus does not limit the experiment even at high frequencies.…”

Section: Discussionsupporting

confidence: 85%

Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films

Rössle

Thomas

Mocuta

et al. 2022

Journal of Applied Physics

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The domain switching dynamics in a relaxor ferroelectric lanthanum modified lead zirconate titanate thin film with 12 mol% La was investigated by time-resolved X-ray diffraction. While most frequently epitaxial thin films are investigated, the present work reports results on a polycrystalline thin film. Asymmetric butterfly loops of the strain as a function of the applied electric field evidenced a built-in electric field oriented towards the thin film-substrate interface. The piezoelectric coefficient d 33 (in the film reference frame) diminishes with the increasing frequency of an applied AC electric field. From the strain transient during the application of Positive-Up Negative-Down voltage pulse sequences with frequencies of up to 100 kHz, characteristic times of the order of 100 to 200 ns were determined for these relaxor ferroelectric thin films. While switching times ranging from the picosecond to the millisecond range are reported in the literature for different materials, these characteristic switching times are comparable to epitaxial PZT thin films of various compositions despite the polycrystallinity of the present thin film. However, the evidenced built-in electric field significantly influences the switching behavior for different polarities.

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Section: Discussionsupporting

confidence: 85%

Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films

Rössle

Thomas

Mocuta

et al. 2022

Journal of Applied Physics

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“…This article specifically focuses on in situ switching of ferroelectric domains during rapid scanning of an SPM tip to directly monitor polarization reversal dynamics. Of course many such experiments have already been performed with standard PFM to study domain dynamics, some by monitoring domain relaxation over periods as long as hours to days after poling, others by serially pulsing and then imaging, and others using a dynamic variation of switching spectroscopy PFM . Most focused on domain growth and/or relaxation, , with some emphasizing domain nucleation events, defect structures, and even domain structures resolved in three dimensions via serial imaging and cross sections .…”

Section: Introductionmentioning

confidence: 99%

High Speed SPM Applied for Direct Nanoscale Mapping of the Influence of Defects on Ferroelectric Switching Dynamics

et al. 2012

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A high speed variation of Scanning Probe Microscopy with continuous image rates on the order of 1 frame per second is applied to investigate the nucleation and growth of individual ferroelectric domains. Movies of consecutive images directly identify nascent domains and their nucleation times, while tracking their development with time and voltage reveals linear domain growth at lateral velocities near 1 mm/s, even faster for nascent domains. Nanoscale maps of nucleation times and growth velocities indicate that domain nucleation and growth are uncorrelated, varying extensively with position. Domain switching dynamics do strongly couple to film defects; for instance, grain boundaries can profoundly pin domain walls, and polarization reversal kinetics are influenced by strain fields near microcracks or in asymmetric specimens. The influence of the onset of switching fatigue is observed as well. These results highlight the importance of updating classical interpretations of ferroelectric switching for truly rigorous models of polarization dynamics. Coupling high speed SPM imaging with in situ activation by voltage or other parameters therefore provides an important methodology to research dynamic surface properties with nanoscale resolution, extendable to a range of materials such as photovoltaics,

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“…Non-volatility is not the only advantage of ferroelectric materials. Polarisation reversal, corresponding to data conversion, arises at low voltages in the sub-μs time scale [3][4][5]. Moreover, endurance and retention performance levels have already met the requirements for commercialisation [6,7].…”

mentioning

confidence: 99%

Proposal of a ferroelectric multi‐bit memory structure for reliable operation at sub‐100 nm scale

Kim

Lee

2015

Micro & Nano Letters

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Although ferroelectric materials are attractive due to their non-volatility originating from their spontaneous polarisation, advances in integrated density of these materials are required. To overcome the poor integration density compared with silicon integrated circuits, the concept of multi-bit memory has arisen. Previous ferroelectric multi-bit memory devices were developed through the realisation of a framework of two laterally neighbouring capacitors, in which both capacitors have different thicknesses for individual switching in different voltage ranges. However, a reliability issue with regard to limiting the additional scale down of these materials to the sub-100 nm level arose due to self-crosstalk, which was defined as a protrusion of the electric fringing field when a logic state was written in a multi-bit memory device. Here, self-crosstalk by simulating an electric field distribution in a multi-bit memory cell based on an actual sample fabricated with a ferroelectric polymer, after which they suggest a new three-dimensional structure of the ferroelectric multi-bit memory device to eliminate self-crosstalk.

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Ferroelectric Switching Dynamics and Pulse-Switching Polarization Measurements

Cited by 4 publications

References 7 publications

Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films

Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films

High Speed SPM Applied for Direct Nanoscale Mapping of the Influence of Defects on Ferroelectric Switching Dynamics

Proposal of a ferroelectric multi‐bit memory structure for reliable operation at sub‐100 nm scale

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