2016
DOI: 10.1002/adfm.201600468
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Ferroelectric Self‐Poling, Switching, and Monoclinic Domain Configuration in BiFeO3 Thin Films

Abstract: Self‐poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as‐grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self‐poling. This study investigates the effect of self‐poling on the monoclinic domain configuration and the switching properties of the two p… Show more

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Cited by 26 publications
(21 citation statements)
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“…Thus, a Schottky barrier can be formed at the Pt/BFO interface, while the BFO/LSMO interface is nearly flat band . On the other hand, naturally formed oxygen vacancies usually accumulate at the Pt/BFO interface, which is consistent with the downward self‐poling in highly strained BFO . As donors, the oxygen vacancy (V O + ) can release electrons to the conduction band ( E C ) and becomes positively charged V O + , which are stable under relatively small electric fields and can be treated as the fixed electron traps .…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…Thus, a Schottky barrier can be formed at the Pt/BFO interface, while the BFO/LSMO interface is nearly flat band . On the other hand, naturally formed oxygen vacancies usually accumulate at the Pt/BFO interface, which is consistent with the downward self‐poling in highly strained BFO . As donors, the oxygen vacancy (V O + ) can release electrons to the conduction band ( E C ) and becomes positively charged V O + , which are stable under relatively small electric fields and can be treated as the fixed electron traps .…”
Section: Resultsmentioning
confidence: 86%
“…[35] Thus, a Schottky barrier can be formed at the Pt/BFO interface, while the BFO/LSMO interface is nearly flat band. [37] As donors, the oxygen vacancy (V O + ) can release electrons to the conduction band (E C ) and becomes positively charged V O + , which are stable under relatively small electric fields and can be treated as the fixed electron traps. [37] As donors, the oxygen vacancy (V O + ) can release electrons to the conduction band (E C ) and becomes positively charged V O + , which are stable under relatively small electric fields and can be treated as the fixed electron traps.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
“…Bulk BiFeO 3 is antiferrodistortive at temperatures below 1200 K. This is a ferroelectric with a high spontaneous polarization below 1100 K and an antiferromagnet below the Neél temperature N ≈ 650 K [90,91]. Well-pronounced multiferroic properties were observed in BiFeO 3 thin films and heterostructures [30,[92][93][94][95]. There are a lot of experimental and theoretical studies concerning the physical properties of bulk BiFeO 3 and BiFeO 3 thin films [68,[77][78][79][96][97][98][99][100][101][102].…”
Section: Bifeo 3 Multiferroic In Fundamental Researchesmentioning
confidence: 99%
“…Bulk BiFeO 3 exhibits antiferrodistortive (AFD) order at temperatures below 1200K; it is ferroelectric (FE) with a large spontaneous polarization below 1100 K and is antiferromagnetic (AFM) below Neel temperature T N ≈ 650 K [23,24]. The pronounced multiferroic properties maintain in BiFeO 3 thin films and heterostructures [25,26,27,28,29]. Despite extensive experimental and theoretical studies of the physical properties of bulk BiFeO 3 and its thin films [21 -23, 30, 31, 32, 33, 34, 35, 36, 37], many important issues concerning the emergence and theoretical background of multiferroic polar, magnetic and various electrophysical properties of BiFeO 3 nanoparticles remain almost unexplored [38,39].…”
Section: Multiferroic Bifeo 3 For Fundamental Studies and Advanced Apmentioning
confidence: 99%