Ferroelectric properties of Zn- and Ti-doped BiFeO3 thin films

Lee, M. H.; Park, J. S.; Cho, H. J.; Kim, D. J.; Sung, Y. S.; Cho, J. H.; Kim, M. H.; Song, Tae Kwon; Kim, W. J.; Do, D.; Choi, Heekyu; Kim, S. S.; Choi, Byung Chun

doi:10.3938/jkps.60.272

Cited by 9 publications

(1 citation statement)

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“…The dielectric constants of the BFZO films with x = 0, 0.05 and 0.1 were 107, 146 and 170, respectively. Lee et al prepared Bi 1.05 FeO 3 and Bi 1.05 Fe 0.09 Zn 0.01 O 3 films by a pulsed laser deposition method. 2Pr and 2Ec values of the BFZO films were 107 μC/cm 2 and 540 kV/cm, respectively, and the leakage current density was approximately two orders of magnitude lower than the leakage current density of BFO films.…”

Section: Introductionmentioning

confidence: 99%

Structure and electrical properties of Zn‐doped BiFeO₃ films

Shen

Zhang

Wang

et al. 2019

Int J Applied Ceramic Tech

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BiFe 1−x Zn x O 3 (x = 0, 0.5, 1, 1.5, 2 mol%) (BFZO) films were prepared on ITO/glass substrates by a sol-gel method. The effects of different Zn contents on the structures and electrical properties of the BFZO films were investigated. From X-ray diffraction (XRD), microstructure and X-ray spectroscopy (XPS) results, the BFZO films with a Zn content of 1 mol% showed a better crystal structure and grain development, and the Fe 2+ and oxygen vacancy concentrations in this sample were the lowest among all the evaluated BFZO films. The P-E hysteresis loop indicated that the BFZO films with 1 mol% Zn had the highest remanent polarization (2Pr), which was 82.4 μC/cm 2 , along with a coercive field (2E c ) of 887 kV/cm at the tested electric field of 857 kV/cm. The BFZO film with 1 mol% Zn had the lowest leakage current density, which was 3.54 × 10 −7 A/cm 2 at the tested electric field of 200 kV/cm. Both at high and low electric fields, the space charge-limited current (SCLC) conduction mechanism was the main leakage mechanism. When the test frequency was 10 5 Hz, the dielectric constant was 133, and the dissipation factor was 0.015. K E Y W O R D SBiFeO 3 films, electrical properties, sol-gel method, Zn doping ACKNOWLEDGMENT

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Section: Introductionmentioning

confidence: 99%