Boosting the photoresponse speed of visible-light-active bismuth ferrite thin films based on Fe-site substitution strategy and favorable heterostructure design

Photovoltaic Effect of La and Mn Co-Doped BiFeO3 Heterostructure with Charge Transport Layers

“…The absorption within the bandgap could be due to the oxygen vacancies generated by the Mn doping. The Eg was estimated to be 3.26 and 3.51 eV for the ZnO and NiO film, respectively, which is consistent with previous research results [22,26]. Figure 3 shows the optical bandgap E g of La and Mn co-doped BFO films, and also the ZnO and NiO films directly coated on ITO glass.…”

“…Tiwari et al reported that the BFO/ZnO heterojunction solar cell showed a V oc of 632 mV and a photo-conversion efficiency of 3.98%, which were among the highest reported values for all oxide solar cells [24]. As a p-type transparent conducting oxide with a wide bandgap of 3.5-4.0 eV, NiO has excellent chemical stability and superior hole transporting ability, which can help in efficiently collecting holes and reducing the charge carrier recombination losses [25,26]. Renuka et al fabricated a WS 2 /BFCrO/NiO heterojunction device with both electron and hole transport layers, and found that the V oc and J sc both increased compared to the device with just one single electron or hole transport layer, leading to an efficiency improvement of about 70% [25].…”

Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn-Doped BiFeO3 Thin Films

“…The addition of Zn 2+ as a p-type doping in BFO may also introduce more oxygen vacancies (V O 2– ) •• to maintain the electric neutrality. Effects of Zn doping on the structure and functional properties of BFO materials have been studied on nanopowders and polycrystalline films. , The doping content of Zn in BFO was <10% in the reported works; otherwise, impurity phases may appear with further increase of the dopants. , Especially, there are some contradictory results reported about the Zn doping effect on the bandgap of BFO materials. , To date, the effects of Zn doping in BFO materials have not been well understood. In this work, we successfully fabricated Zn-doped BFO epitaxial thin films with high doping concentration by pulsed laser deposition.…”

“…20,21 Especially, there are some contradictory results reported about the Zn doping effect on the bandgap of BFO materials. 22,23 To date, the effects of Zn doping in BFO materials have not been well understood. In this work, we successfully fabricated Zn-doped BFO epitaxial thin films with high doping concentration by pulsed laser deposition.…”

Ferroelectric enhanced Ga2O3/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

“…However, the existence of abundant oxygen vacancies in BFO deteriorates its ferroelectricity. 19 Liang et al reported that the ferroelectricity of BFO can be significantly improved by Mn doping. 20 In addition, Mn-doped BFO (BiFe 0.95 Mn 0.05 O 3 , BFMO) has an appropriate energy band structure, which leads to a type-II energy band alignment when in contact with Ga 2 O 3 .…”