Ferroelectric properties of Nd-substituted bismuth titanate thin films processed at low temperature

Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film

“…However, fatigue was improved in the La-substituted BIT (BLT) thin films [6]. To improve the ferroelectric and electrical properties [3][4][5][6][8][9][10], the effects of ion doping on the A-and B-sites have been widely studied [11][12][13][14][15][16][17][18][19][20][21][22][23]. In addition, it is necessary to obtain BLT thin film with a high remnant polarization and low leakage current.…”

Sintering and Characterization of Rare Earth Doped Bismuth Titanate Ceramics Prepared by Soft Combustion Synthesis

“…This ion substitution resulted in large remanent polarization value over 20µC/cm 2 , which was considerably higher than that of BTO films. Furthermore, it has good fatigue resistance, low leakage current at 10 -7 A/cm 2 at 5V and low processing temperature approximately in the range of 650 to 700 o C. Recently, it has been reported that the substitution of Nd 3+ in BTO thin films was more effective for improving the ferroelectric properties than La substitution (Kim ,Kim, 2005). This result can be explained by the fact that the substitution of Bi 3+ by rareearth ions with a smaller ionic radius for the Bi 3+ site is effective in improving the ferroelectric properties.…”

Niobium doping effects and ferroelectric relaxor behavior of bismuth lantanium titanate

“…On the other hand, the dielectric and ferroelectric properties were also changed by the high-valent cation substitution such as Nb, V and W elements [2, 7, 8,]. However, the ion doping effects [13][14][15][16][17][18][19][20][21][22] on the relaxor behavior of BLT has seldom been studied in detail. Previously, the ferroelectric relaxor behaviors [13][14][15][16][17][18] have been well established for various solid solution such as Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) with perovskite structure and Sr 1−x Ba x Nb 2 O 6 (SBN) with tungsten bronze structure.…”

“…Specifically, BLT ceramics were found to have low-frequency dielectric dispersions at the temperature above 200 • C, Remarkably, however, the dielectric dispersion of the BLTN ceramics decreased. Therefore, the donor doping of Nb +5 for Ti 4+ resulted in a decrease of low frequency dispersions, which were caused by the compensations that were made for defect such as bismuth and oxygen vacancies [19][20][21][22].…”