Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film

Abstract

Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and V-doped BLT (BLTV) thin films were prepared on Pt/Ti/SiO 2 /Si substrates by a pulsed laser deposition method. The effects of V doping on ferroelectric and electrical properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. BLTV single phases were confirmed by X-ray diffraction. Remnant polarization was increased and the leakage current density was decreased by V doping. The leakage current density of BLT thin films suddenly increased at 100 kV/cm while that of BLTV thin films increased at the higher electric field of 160 kV/cm. The power law relationship J α E n of current density vs. applied electric field is estimated to be J αE 2.0 for BLT and J αE 1.0 for BLTV thin films. The leakage current of the BLT/Pt junction can be explained by space-charge-limited current. However, that of the BLTV/Pt junction was characterized by the Schottky emission behavior.

Leakage-current characteristics of vanadium- and scandium-doped barium strontium titanate ceramics over a wide range of DC electric fields

“…A number of other studies have reported that doping with impurity donors has been correlated with a drop in the leakage current [15][16][17], as we also found with V-doping. The earlier studies attributed the reduction in leakage current with a drop in the oxygen vacancy concentration [16,17].…”

“…The addition of donors such as La 3+ at the Ba site 15 and Nb 5+ at the Ti 4+ site 16 in BaTiO 3 significantly reduces the leakage current. This trend is also observed in another titanate, Bi 3.25 La 0.75 Ti 3 O 12 [17]. The J À E !…”

Leakage Current Characteristics of Lead-Free K0.5Na0.5NbO3 Ferroelectric Thin Films with (K,Na) Excess and Li Substitution

“…In this work, the Ohmic conduction process dominates in a low electric field at room temperature, which is similar to that of other ferroelectric thin film. [22][23][24] With increasing temperature, the leakage current density is described by the Schottky and Poole-Frenkel emission. Previously, many researchers reported the conduction process for ferroelectric thin films.…”