Ferroelectric properties of Ba0.6Sr0.4TiO3 thin films with different grain sizes

Fu, Chunlin; Yang, Chuanren; Chen, Hongwei; Hu, Liye; Wang, Yingxin

doi:10.1016/j.matlet.2004.10.023

Cited by 37 publications

(11 citation statements)

References 16 publications

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“…The remanent polarization (2Pr) and the coercive electric field (Ec) at an applied voltage of 20 V for the BST films are 2.29 μC/cm 2 and 22.27 kV/cm, respectively. The remanent polarization is relatively low, which may be due to relatively smaller crystalline size and lower Ba/Sr ratio [10][11][12][13].…”

Section: Resultsmentioning

confidence: 99%

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Coplanar Phase Shifters Based on Ferroelectric Thin Films

Pan

Chen

et al. 2007

Int J Infrared Milli Waves

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Barium strontium titanate (Ba 0.6 Sr 0.4 TiO 3 , short for BST) thin films were prepared by RF-magnetron sputtering. The dielectric tunability, loss tangent, remanent polarization (2Pr) and coercive electric field (Ec) of the BST films are respectively 29.5%, 0.013, 2.29 μC/cm 2 and 22.27 kV/cm at 1 kHz and 20 V. The designed coplanar waveguide (CPW) phase shifter consists of 56 same sections. It is shown that the fabricated lines of electrodes are smooth and the widths at the tip of bottom electrodes are about 5 μm. At the central frequency of 28 GHz and a bias voltage of 20 V, the figure of merit is approximately 13°/dB.

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Section: Resultsmentioning

confidence: 99%

“…Why the BST thin films below the critical Ba/Sr ratio have apparent ferroelectric characteristics is unknown. One possibility is because of dispersion and relaxation of crystal structure around Curie temperature (Tc) [12,13].…”

Section: Resultsmentioning

confidence: 99%

Coplanar Phase Shifters Based on Ferroelectric Thin Films

Pan

Chen

et al. 2007

Int J Infrared Milli Waves

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“…Barium Strontium Titanate (BST) in thin film form is one of the most promising ferroelectric materials for ferroelectric field effect transistor (FeFET) application due to the desirable properties such as high permittivity and relatively high remnant polarization [8,9]. Relatively few studies reported the electrical properties for BST as a MIS junction [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of silicon-based Ba<inf>0.7</inf>Sr<inf>0.3</inf>TiO<inf>3</inf> thin films for FeFET applications

Saif

Poopalan

2012

2012 4th Asia Symposium on Quality Electronic Design (ASQED)

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Ferroelectric Ba 0.7 Sr 0.3 TiO 3 thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric properties of the MFM type films were studied using Sawyer-Tower circuit. The films show hysteresis loop, its strength increases with the film thickness which is attributed the grain size effect. Whereas the ferroelectric properties of the MFIS type films were studied using capacitance-voltage (C-V) characteristics. The films show memory window its width increases with the film thickness which is also attributed the grain size effect.

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“…Among numerous ferroelectrics, barium strontium titanate ( Ba x Sr 1−x TiO 3 ) or BST in thin film form is considered to be one of the leading candidates for microelectronic devices due to its low-cost synthesis, high dielectric constant, low dielectric loss, and composition dependent Curie temperature, which can be controlled by adjusting the barium-to-strontium ratio [1,2].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Grain Size on the Conduction Mechanism of Barium Strontium Titanate Thin Films

Saif

Jamal

Poopalan

2011

Zeitschrift Für Naturforschung A

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Sol-gel barium strontium titanate ( Ba 0.6 Sr 0.4 TiO 3 ) thin films with different grain sizes have been successfully fabricated as metal-insulator-metal (MIM) capacitors. The perovskite structure of the material has been confirmed via X-ray diffraction (XRD). In order to correlate the effect of the grain size to the conduction mechanisms of these films, atomic force microscopy (AFM) results are presented. The grain size shows an important effect on the conduction mechanism for the films. The results show that as the grain size increases, both the impedance and the permittivity of the films decrease, whereas the conductivity shows an inverse variation. The Z * plane for all films shows two regions, corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes conduction process. M versus frequency plots reveal non-Debye relaxation peaks, which are not able to be observed in the ε plots. Alternating current (AC) conductivity versus frequency plots show three regions of conduction processes, i.e. a low-frequency region due to direct current (DC) conduction, a mid-frequency region due to translational hopping motion, and a high-frequency region due to localized hopping and/or reorientational motion.

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Ferroelectric properties of Ba0.6Sr0.4TiO3 thin films with different grain sizes

Cited by 37 publications

References 16 publications

Coplanar Phase Shifters Based on Ferroelectric Thin Films

Coplanar Phase Shifters Based on Ferroelectric Thin Films

Fabrication and characterization of silicon-based Ba<inf>0.7</inf>Sr<inf>0.3</inf>TiO<inf>3</inf> thin films for FeFET applications

Influence of the Grain Size on the Conduction Mechanism of Barium Strontium Titanate Thin Films

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