Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Abstract

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi 3.25 La 0.75 Ti 3 O 12 ͑BLT͒ thin films deposited on La 0.5 Sr 0.5 CoO 3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization ͑2P r ͒ of 47.6 C/cm 2 and ͑2E c ͒ of 55 kV/ cm, fatigue-free characteristics up to 10 10 switching cycles, and a current density of 0.7 A/cm 2 at 10 kV/ cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

Microwave-hydrothermal synthesis of barium strontium titanate nanoparticles

“…To reduce the surface energy, the primary particles have a tendency to form nearly spherical agglomerates, in a minimum surface to volume ratio and hence reducing surface free energy [29,28]. This type of grain structure is common in oxide, ferrite and titanate ceramics [30][31][32][33][34][35][36][37]. This is a result of an abnormal/discontinuous grain growth and also called an exaggerated grain growth.…”

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

“…potential candidates for ferroelectric energy storage. [104][105][106] Lou et al have first put BLT systems into practice for improving the lead-free systems' energy storage performances by preparing the Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thick films on Pt/Ti/SiO 2 / Si wafers using chemical solution deposition (CSD), as shown in Figure 14a. By means of changing annealing temperature, excellent ESD of 47.7 J cm −3 with goodish fatigue behavior has been obtained in BLT thick film for the slim P-E loop, which is attributed to the effects of small crystallite.…”

Effects of ultraviolet irradiation and soak time on the leakage current of Bi3.25La0.75Ti3O12 thin films

“…The leakage current -voltage (or electric field) characteristics showed the Ohmic behaviour. This conduction mechanism has been observed in many samples when the samples were measured in low voltage region such as Wu et al [15] observed the same conduction mechanism in YMnO 3 thin films prepared on (001) GaN substrates by pulsed laser deposition, and Simões et al [16] observed this conduction mechanism in Bi 3.25 La 0.75 Ti 3 O 12 thin films deposited on La 0.5 Sr 0.5 CoO 3 by the polymeric precursor method. The Ohmic conduction mechanism described above can also be used to explain the experimental results of Fig.…”