Ferroelectric phase transition in monoclinic TlS

Kashida, Shoji; Nakamura, Kazuo; Katayama, Soichi

doi:10.1016/0038-1098(92)90685-3

Cited by 24 publications

(19 citation statements)

References 10 publications

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“…Thallium monosulfide is a mixed valence compound, represented by the formula Tl + Tl 3+ S 4− 2 . This compound crystallizes in two different structures of the chain and layered type, respectively [1][2][3][4][5]. Tetragonal structure of the chain TlS [1] comprises alternating chains of uniand trivalent thallium ions along the c axis.…”

Section: Introductionmentioning

confidence: 99%

“…Tetragonal structure of the chain TlS [1] comprises alternating chains of uniand trivalent thallium ions along the c axis. The layered modification of TlS [3][4][5][6], studied in this paper, is built from the metal-chalcogen layers formed of corner-linked Tl 3+ S 2− 4 tetrahedra (figure 1). Univalent thallium atoms are located between the layers forming linear chains in the a, b-plane.…”

Section: Introductionmentioning

confidence: 99%

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Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Panich

Kashida

2004

J. Phys.: Condens. Matter

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We have studied the electronic structure of the layered semiconductor TlS by means of 203 Tl and 205 Tl NMR and band structure calculation. The crystal structure of this compound is built from the metal-chalcogen layers formed of linked Tl 3+ S 2− 4 tetrahedra and Tl + ions located between the layers. Our experiments show significant interlayer indirect exchange coupling of thallium nuclei. Since the distances between thallium ions essentially exceed the sum of their ionic radii, it is concluded that such coupling is realized due to the overlap of the Tl electron wavefunctions across the intervening S atom. The exchange interaction has been evaluated by means of the quantitative spectral analysis. The band structure calculation shows that the top of the valence band is composed of mixed Tl + 6s6p z -S 3s3p z -Tl 3+ 6s6p z states, yielding overlap of the Tl + -S-Tl 3+ type. Such electronic structure gives rise to the effective interlayer coupling of Tl nuclear spins observed in the experiment. This effect is discussed along with the recently obtained NMR results in the chain thallium sulfide and selenide.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Panich

Kashida

2004

J. Phys.: Condens. Matter

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“…Note that TlS is chained T crystal which has the same SG with almost same parameter a, but considerably differs in c [13]. The excess of sulfur also causes growing of TlS-crystal in monoclinic layered structure instead of usual chained T-modification [13,14]. The temperature dependence of ) (T ε for T-TlInS 2 does not exhibit any anomaly.…”

Section: T-crystals Of Chained Tlinsmentioning

confidence: 94%

Growth of orthorhombic and tetragonal modifications of TlInS₂ from its monoclinic phase

Alekperov¹,

Ibragimov

Axundov

et al. 2009

Phys. Status Solidi (c)

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Orthorhombic (O) and tetragonal (T) modifications of TlInS2 were grown by sulfur vapor annealing of monoclinic (M) crystals. Lattice parameters and syngony of the grown crystals were determined from X‐ray investigations (Laue, Weissenberg, rocking crystal and powder diffractions). The lattice parameters a = 6.88 Å, b = 14.04 Å, c = 4.02 Å, Z = 4 and a = b = 7.76 Å, c = 26.6 Å, Z = 20 as well as space groups (SG), P212121 and P41212 were ascribed to O and T modifications, correspondingly. The transition of M‐crystals to O‐ or T‐phase takes place through the intermediate disordered state of M‐phase in which the unit packets with c ≈ 15 Å are randomly positioned along the c‐axis. From photoconductivity (PC) edge it was found that the band gap of O‐TlInS2 (Eg = 2.52 ± 0.01 eV) is slightly higher whereas that of T‐TlInS2 (Eg = 1.87 ± 0.01 eV) is noticeably lower than the band gap of M‐TlInS2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Это обстоятельство стимулировало применение различных технологических способов, в том числе радиации, для получения новых материалов с заданными характеристиками. Интересными представителями таких материалов являются монокристаллы TlInSe 2 с цепочечной кристаллической структурой [1][2][3]. Кристаллы TlInSe 2 обладают высокой чувствительностью к ближнему инфракрасному излучению, к жесткой радиации, проявляют высокую радиационную стойкость [4].…”

Section: Introductionunclassified

Особенности механизма электропроводности в γ-облученных монокристаллах TlInSe-=SUB=-2-=/SUB=- под гидростатическим давлением

Мадатов¹,

Гасымов²,

Бабаев³

et al. 2020

Физика И Техника Полупроводников

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Исследовано влияние гидростатического давления до 10 кбар на электропроводность γ-облученных цепочечных монокристаллов TlInSe2 с удельным сопротивлением rho~108 Ом·см. Установлено, что наблюдаемые аномалии электропроводности облученных образцов TlInSe2 при дозах облучения D<100 крад и D>100 крад связаны с упорядоченной перестройкой дефектов, в состав которых входят межузельные атомы катионов и анионов. Характер аномального изменения, барические зависимости удельного сопротивления rho(P) в облученных образцах свидетельствуют о том, что под действием давления формируются локальные энергетические уровни за счет макроскопических скоплений радиационных дефектов, в результате чего изменяется энергия уровня Ферми, изменяется концентрация носителей заряда. Ключевые слова: гидростатическое давление, электропроводность, цепочечные монокристаллы, γ-облучение, радиационные дефекты, барическая зависимость.

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Ferroelectric phase transition in monoclinic TlS

Cited by 24 publications

References 10 publications

Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Growth of orthorhombic and tetragonal modifications of TlInS₂ from its monoclinic phase

Особенности механизма электропроводности в γ-облученных монокристаллах TlInSe-=SUB=-2-=/SUB=- под гидростатическим давлением

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Ferroelectric phase transition in monoclinic TlS

Cited by 24 publications

References 10 publications

Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Indirect nuclear exchange coupling and electronic structure of the layered semiconductor TlS: NMR study and band structure calculation

Growth of orthorhombic and tetragonal modifications of TlInS2 from its monoclinic phase

Особенности механизма электропроводности в &gamma;-облученных монокристаллах TlInSe-=SUB=-2-=/SUB=- под гидростатическим давлением

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Growth of orthorhombic and tetragonal modifications of TlInS₂ from its monoclinic phase

Особенности механизма электропроводности в γ-облученных монокристаллах TlInSe-=SUB=-2-=/SUB=- под гидростатическим давлением