Ferroelectric phase shifters for phased array radar applications

Collier, D.

doi:10.1080/10584589408018666

Cited by 7 publications

(2 citation statements)

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“…The total wave delay will become a function of the bias field, and, therefore, will produce a phase shift , where is the length of the line. The reason why FEM has not been widely used for microwave applications to date is mainly due to the large bias voltage required to change the dielectric constant (typically a waveguide phase shifter based on FEM requires a bias voltage of 2 kV [4]), and to the high losses in the material. Use of a new sol-gel technique for the synthesis of high-quality lowloss barium modified strontium titanium oxide [Ba Sr TiO (BST)], combined with the use of a thin ceramic structure, Manuscript received October 3, 1996;revised February 28, 1997.…”

Section: Introductionmentioning

confidence: 99%

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Flaviis¹,

Alexopoulos

Stafsudd

1997

IEEE Trans. Microwave Theory Techn.

184

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Ferroelectric materials (FEM's) are very attractive because their dielectric constant can be modulated under the effect of an externally applied electric field perpendicular to the direction of propagation of a microwave signal. FEM may be particularly useful for the development of a new family of planar phase shifters which operate up to X X X-band. The use of FEM in the microwave frequency range has been limited in the past due to the high losses of these materials tan = 0:3 at 3 GHz is typical for commercial BaTiO 3 (BTO) and due to the high electric field necessary to bias the structure in order to obtain substantial dielectric constant change. In this paper, how a significant reduction in material losses is possible is demonstrated. This is achieved by using a new sol-gel technique [1] to produce barium modified strontium titanium oxide [Ba10xSrxTiO3 (BST)], which has ferroelectric properties at room temperature. Also demonstrated is how the use of thin ceramics reduces the required bias voltage below 250 V, with almost no power consumption required to induce a change in the dielectric constant. A phase shift of 165 was obtained at 2.4 GHz, with an insertion loss below 3 dB by using a bias voltage of 250 V. Due to the planar geometry and light weight of the device, it can be fully integrated in planar microwave structures.

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Section: Introductionmentioning

confidence: 99%

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Flaviis¹,

Alexopoulos

Stafsudd

1997

IEEE Trans. Microwave Theory Techn.

184

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“…F erroelectric materials offer an enticing prospect for incorporation into frequency‐agile microwave electronic components, including phase shifters, varactors, tunable filters, and antennas 1,2 . Ultimately, these materials are envisioned to enter into microwave integrated circuits for a possible insertion in satellite and wireless communication platforms 3,4 . In this area, (Ba,Sr)TiO 3 ‐based ceramic thin films are considered as leading candidates for room temperature (RT) applications 5,6 .…”

Section: Introductionmentioning

confidence: 99%

Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)‐Oriented Ba_0.6Sr_0.4TiO₃ Thin Films

Yang

Wang

Dong

et al. 2010

Journal of the American Ceramic Society

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This study investigated the variations in the permittivity with film thickness and measurement temperature of perfectly (111)‐oriented Ba0.6Sr0.4TiO3 thin films with thicknesses ranging from 45 to 800 nm, which were prepared by RF magnetron sputtering on Pt/TiOx/SiO2/Si substrates. All the films showed elongations in the lattice parameter, suggesting the presence of residual strains but which were insensitive to the film thickness. The temperature‐dependent measurement of the permittivity revealed an unusual Curie point independent of thickness, about 305±5 K, where the phase transition appeared frustrated. The thickness‐dependent permittivity at a given temperature was explained by using the interfacial intrinsic low‐permittivity layer model reported previously.

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Ferroelectric-on-Superconductor Devices

Scott

2007

High Tc Superconductors and Related Transition Metal Oxides

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Ferroelectric phase shifters for phased array radar applications

Cited by 7 publications

References 1 publication

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)‐Oriented Ba_0.6Sr_0.4TiO₃ Thin Films

Ferroelectric-on-Superconductor Devices

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Ferroelectric phase shifters for phased array radar applications

Cited by 7 publications

References 1 publication

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Planar microwave integrated phase-shifter design with high purity ferroelectric material

Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)‐Oriented Ba0.6Sr0.4TiO3 Thin Films

Ferroelectric-on-Superconductor Devices

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Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)‐Oriented Ba_0.6Sr_0.4TiO₃ Thin Films