Ferroelectric-on-Superconductor Devices

Scott, J. F.

doi:10.1007/978-3-540-71023-3_24

Search citation statements

Order By: Relevance

Paper Sections

Select...

Experimental Results and Device Modelling1

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2008

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(2 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured effective capacitance (C DUT END ) and loss tangent (tan δ DUT END ) are obtained from the measured impedance of the DUT, as shown in equations ( 6) and (7).…”

Section: Experimental Results and Device Modellingmentioning

confidence: 99%

See 1 more Smart Citation

Dielectric characterization of a ferroelectric film in the sub-GHz region

Bao¹,

Jackson²,

Lancaster³

2008

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

A new method is proposed for the measurement of the dielectric properties of BaxSr1−xTiO3 (BST) thin films in the frequency range 106–1.8 × 109 Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.

show abstract

“…The measured effective capacitance (C DUT END ) and loss tangent (tan δ DUT END ) are obtained from the measured impedance of the DUT, as shown in equations ( 6) and (7).…”

Section: Experimental Results and Device Modellingmentioning

confidence: 99%

“…Research has been largely based on barium strontium titanate (BST) because of its structural and chemical compatibility with the HTS materials. There are now several review articles surveying thin film ferroelectric microwave devices [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%