Ferroelectric memories

Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

“…Recently, SBT films were successfully prepared by several research groups [11][12][13][14][15][16][17] using metalorganic decomposition ͑MOD͒ [11][12][13][14][15] or pulsed laser deposition ͑PLD͒ 16,17 techniques. All the reported data on these materials showed very attractive ferroelectric properties and fatigue-free characteristics.…”

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

“…These films showed excellent ferroelectric properties in terms of large remnant polarization ͑2P r ͒ of 47.6 C/cm 2 and ͑2E c ͒ of 55 kV/ cm, fatigue-free characteristics up to 10 10 switching cycles, and a current density of 0.7 A/cm 2 at 10 kV/ cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology.…”

“…1,2 In the FeRAM cells, the two remanent polarization P r states of ferroelectric thin film capacitors can be used to store binary "0" and "1." The stored information can be maintained without any external energy supply, making these memories nonvolatile.…”

Microstructure and texture dependence of the dielectric anomalies and dc conductivity of Bi3TiNbO9 ferroelectric ceramics

“…2 Moreover, their low fatigue, high polarization retention, and low leakage currents make them interesting for nonvolatile ferroelectric random access memories ͑FERAMs͒ when they are prepared as thin films. 3 As it happens in other compositions with similar crystalline structure, it is difficult to obtain dense ceramics of Bi 3 TiNbO 9 ͑hereinafter called BTN͒ when they are prepared by solid-state reaction due to the growth habit. It gives place to lamella-like particles, 4 due to the anisotropy of the crystalline structure, which are difficult to compact.…”