Ferroelectric domain switching dynamics with combined 20 nm and 10 ns resolution

Polomoff, Nicholas A.; Premnath, Ramesh Nath; Bosse, James L.; Huey, Bryan D.

doi:10.1007/s10853-009-3699-x

Cited by 30 publications

(26 citation statements)

References 24 publications

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“…Similar SPM tip-induced polarization reversal process has been explored in different materials by multiple groups worldwide [17][18][19][20][21][22][23] . These studies provide detailed information on mechanisms and kinetics of polarization reversal process induced by the SPM tip, including shape and sizes of the formed domains 17,18,20,21,24 , kinetics of the switching and relaxation [25][26][27] , and the role of the external conditions on these processes 22,28 . In most cases, tip-induced local polarization reversal led to the formation of isolated domains.…”

Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).

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Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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“…These frequency behaviors were explored by a number of authors. 95,[182][183][184] At low frequencies the frequency dispersion of the transfer function is relatively small and is primarily associated with the non-idealities of the cantilever design. Practically, variations of 10-20% (or more) are common, allowing establishing piezoelectric properties within this order of magnitude.…”

Section: Iic Complex Excitations and Spectroscopiesmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

252

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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“…Others limitations include (1) limited spatial resolution stemming from the fact that tip diameters are typically tens of nanometers in width, (2) slow scanning speed which makes direct measurement of kinetics difficult and renders probing processes at short time scales essentially impossible, and (3) near-surface sensitivity and information that arises from the fundamental nature of the scanning-probe process. It should be noted that recent advances in pulse train-based studies have improved the time resolution of scannedprobed-based studies, 28,29 but many uncertainties remain about intermediate processes that occur during switching, domain nucleation mechanisms and propagation kinetics, and domain-defect interaction, and this information is essential to better quantify domain dynamics in ferroelectric and multiferroic materials.…”

Section: Introductionmentioning

confidence: 99%

“…The asterisk next to "PFM" denotes an acknowledgement that the use of pulse trains is currently being studied to improve temporal resolution of the technique. 28,29 It should also be noted that although Lorentz TEM and off-axis electron holography techniques [35][36][37] are useful tools for probing magnetization reversal in magnetic structures as a function of applied magnetic field, such techniques still have a number of major limitations. One issue is that the low-field objective lenses FIG.…”

Section: Introductionmentioning

confidence: 99%

Accessing intermediate ferroelectric switching regimes with time-resolved transmission electron microscopy

Winkler¹,

Jablonski²,

Damodaran³

et al. 2012

Journal of Applied Physics

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Piezoresponse force microscopic study of ferroelectric (1−x)Pb(Sc1/2Nb1/2)O3−xPbTiO3 and Pb(Sc1/2Nb1/2)O3 single crystals J. Appl. Phys. 112, 052009 (2012) Piezoresponse force microscopy studies on the domain structures and local switching behavior of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals J. Appl. Phys. 112, 052006 (2012) Antiferroelectric-like properties and enhanced polarization of Cu-doped K0.5Na0.5NbO3 piezoelectric ceramics Appl. Phys. Lett. 101, 082901 (2012) BiFeO 3 (BFO) is one of the most widely studied magneto-electric multiferroics. The magnetoelectric coupling in BiFeO 3 , which allows for the control of the ferroelectric and magnetic domain structures via applied electric fields, can be used to incorporate BiFeO 3 into novel spintronics devices and sensors. Before BiFeO 3 can be integrated into such devices, however, a better understanding of the dynamics of ferroelectric switching, particularly in the vicinity of extended defects, is needed. We use in situ transmission electron microscopy (TEM) to investigate the response of ferroelectric domains within BiFeO 3 thin films to applied electric fields at high temporal and spatial resolution. This technique is well suited to imaging the observed intermediate ferroelectric switching regimes, which occur on a time-and length-scale that are too fine to study via conventional scanning-probe techniques. Additionally, the spatial resolution of transmission electron microscopy allows for the direct study of the dynamics of domain nucleation and propagation in the presence of structural defects. In this article, we show how this high resolution technique captures transient ferroelectric structures forming during biasing, and how defects can both pin domains and act as a nucleation source. The observation of continuing domain coalescence over a range of times qualitatively agrees with the nucleation-limited-switching model proposed by Tagantsev et al. We demonstrate that our in situ transmission electron microscopy technique is well-suited to studying the dynamics of ferroelectric domains in BiFeO 3 and other ferroelectric materials. These biasing experiments provide a real-time view of the complex dynamics of domain switching and complement scanning-probe techniques. V C 2012 American Institute of Physics. [http://dx

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Ferroelectric domain switching dynamics with combined 20 nm and 10 ns resolution

Cited by 30 publications

References 24 publications

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Accessing intermediate ferroelectric switching regimes with time-resolved transmission electron microscopy

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