Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ievlev, Anton V.; Morozovska, Anna N.; Eliseev, Eugene A.; Shur, V. Ya.; Kalinin, Sergei V.

doi:10.1038/ncomms5545

Cited by 53 publications

(54 citation statements)

References 46 publications

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“…back switching [80][81][82][83][84] and chaotic screening of ferroelectrics by PFM. 85,86 However, these studies demonstrated that KPFM (or any other long-range field contrast) is controlled by the interplay between polarization and (poorly understood and controlled) screening and charging processes, and does not provide information on ferroelectric behavior per se. Furthermore, the spatial resolution of KPFM is limited to ~50 nm, above the range of interest for ferroelectric materials often containing nanometer-scale domain structures.…”

Section: Iia Basic Pfmmentioning

confidence: 99%

“…For polarization, the underpinning phenomena are similar, except that regions with switched polarization play the role of a virtual electrode. The accumulation, injection, and transport of ionic charge now becomes an inherent part of the switching process, as illustrated by phenomena such as the formation of bubble domains during back switching, 80,242 domain shape stability loss, 85 and chaos 86 during ferroelectric switching.…”

Section: A Surface Ionic Screeningmentioning

confidence: 99%

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Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

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264

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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Section: Iia Basic Pfmmentioning

confidence: 99%

Section: A Surface Ionic Screeningmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

Self Cite

264

206

View full text Add to dashboard Cite

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“…[6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Abnormal switching behaviors, including backswitching, 12,15,[21][22][23] polarization reversal by the "wrong" polarity of the switching voltage 7,11,17,19 and switching along the path of the unbiased SPM tip 18, 24 were reported. These phenomena were attributed to the charge injection 12,15 , screening of the applied electric fields 25 and ferroelastoelectric switching.…”

mentioning

confidence: 99%

“…In the case of switching against applied electric field, 12,15,19 electric field induces in the tip are due to the injection of the screening charges near the tip. In the case of backswitching with formation of the ring-shaped domains, 18,[21][22][23] this is due to charges on the charged domain walls of the non-through domain.…”

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confidence: 99%

Ferroelectric switching by the grounded scanning probe microscopy tip

et al. 2015

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Polarization reversal in ferroelectrics by the tip of scanning probe microscope was intensively studied for last two decades. In addition to classical domain formation and growth, a number of abnormal switching phenomena have been reported. In particularly, it was experimentally and theoretically shown that slow dynamics of the surface screening can control the kinetics of the ferroelectric switching, and result in backswitching and relaxation phenomena. Here, we experimentally demonstrated the practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to the induction of the slowly dissipating charges into the surface, which in the presence of the grounded tip induce polarization reversal. Analytical and numerical electrostatic calculations allow additional insight into the mechanisms of the observed phenomena. 3Piezoresponse force microscopy (PFM) is one of the most popular techniques used for the complex investigations of the ferroelectric materials, allowing visualization of the static ferroelectric domain structures. [1][2][3] At the same time application of the electric field through conductive tip opens a pathway for manipulation with the domain structures on the nanoscale. 4, 5The process of the polarization reversal under the action of the electric field produced by the SPM tip was carefully studied by multiple scientific groups worldwide. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Abnormal switching behaviors, including backswitching, 12,15,[21][22][23] polarization reversal by the "wrong" polarity of the switching voltage 7,11,17,19 and switching along the path of the unbiased SPM tip 18, 24 were reported. These phenomena were attributed to the charge injection 12,15 , screening of the applied electric fields 25 and ferroelastoelectric switching. 7 Despite clear relevance to the qualitative and quantitative interpretation of PFM-derived data on polarization switching, exact origins of the observed phenomena remain poorly understood.Here we experimentally studied the process of the tip-induced polarization reversal in the vicinity of the flat domain wall in the thin periodically poled LiNbO 3 single crystal.Investigations demonstrated unexpected pronounced switching along the path of the grounded SPM tip at distances above 1 μm from the point of the field application. This switching led to the formation of sharp spikes on the initial flat domain wall and nanodomain chains. The obtained results were explained in terms of the spatial distribution of the electric field produced by freshly switched domains and grounded SPM tip. Analytical and numerical calculations of the electric field distribution showed presence of the pronounced induced electric field into the tip surface. Observed phenomenon allows explanation of number of the abnormal switching dynamics reported earlier. 12,15,18 However it gives rise to much wider set 4 of behaviors. For instance, it enables switching (not backswitching) by the grounded tip in th...

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“…This technique consists of application the local electric field and visualization of the created domains with nanometer spatial resolution. A large amount of papers are devoted to the investigation of the local polarization reversal in various ferroelectrics, such as lithium niobate [2][3][4], but domain kinetics in relaxors is still insufficiently studied.…”

Section: Introductionmentioning

confidence: 99%

Polarization reversal by tip of scanning probe microscope in SBN

Neradovskaya¹,

Neradovskiy²,

Fedorovyh³

et al. 2016

Kms

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We present the results of experimental study of the influence of initial domain state on the shape and size of isolated domains created by the conductive tip of scanning probe microscope during local polarization reversal in relaxor ferroelectric strontium barium niobate doped with nickel and cerium. The domain radius was found to increase with increasing voltage and time and depend on the initial polarization direction. Circular domains of the opposite sign were found to appear due to polarization backswitching. The obtained results can be used for practical applications of domain and domain wall engineering in ferroelectrics.

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Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Cited by 53 publications

References 46 publications

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Ferroelectric switching by the grounded scanning probe microscopy tip

Polarization reversal by tip of scanning probe microscope in SBN

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