Ferroelectric domain reversal in LiNbO3 crystals using high-voltage atomic force microscopy

Abstract

High-voltage atomic force microscopy is used for nanoscale polarization reversal in LiNbO3 single crystals. The tailored domain patterns have been observed using piezoelectric force microscopy and etching techniques. A variety of domain shapes preserving the elementary crystallographic symmetry have been obtained. It has been found that the sidewise domain wall motion under the huge electric field near the apex of atomic force microscope tip occurs in isotropic manner. The dependence of the domain equilibrium size on the applied high voltage is analyzed and discussed.

Dynamics of ferroelectric domain growth in the field of atomic force microscope

“…This behavior differs significantly from the r m ϰ U 2/3 dependence observed for equilibrium domains in bulk crystals. [9][10][11] This difference originates from the different depolarization energy dependence on the domain size for these two cases.…”

“…1 This interest arises mainly from the potential application of nanodomain superlattices for a generation of electronic and photonic devices. Experiments show that evolution of domains tailored in thin films [2][3][4][5] and bulk ferroelectrics [6][7][8][9][10][11] by the use of AFM is very different. Application of a high bias of more than kilovolt to the tip led to the observation of the so-called "domain breakdown" in bulk ferroelectric crystals.…”

“…Recently, detailed studies of the equilibrium domain shape dependence on the applied voltage were performed by us under the conditions of domain breakdown in congruent lithium niobate ͑LN͒ crystals. 8,9,11 The analysis of domain growth dynamics in congruent crystals becomes significantly harder due to the existence of strong obstacles which pin the motion of domain walls ͑DW͒. 12 The process of the DW overcoming the obstacles has not been studied yet which causes considerable difficulties in the interpretation of experiments on DW growth dynamics in ferroelectric congruent crystals.…”

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

“…Now let us apply our theoretical results to the micro-domain formation in LiNbO 3 single crystals using high-voltage AFM. In experiments [1], [22] …”

“…It is clear from general point of view that domains formation can be caused by strong local electric fields with definite polarity. Recently one and two dimensional arrays of spike-like nano-domains have been fabricated in LiNbO 3 [1], LiTaO 3 [2], Pb(Zr,Ti)O 3 [3], BaTiO 3 [4], RbTiOPO 4 and RbTiOAsO 4 [5] ferroelectric crystals with the help of electric fields caused by atomic force microscope (AFM) tip. Obtained nano-domain arrays could be successfully used in modern large-capacity memory devices and light converters based on second harmonic generation.…”