Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

Abstract

Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

Flexoelectric nanodomains in rare-earth iron garnet thin films under strain gradient

“…However, this design for novel multiferroics, inducing a strain gradient in magnetic materials, can be applied not only to garnet ferrites but also to other magnetic materials like spinel and perovskite, because flexoelectricity is a universal feature in dielectrics 15 . Furthermore, we successfully imaged self-assembled polar domains with a size of tens of nanometers that were constructed by a simple film-growth technique, which has been reported in ferroelectric nanostructures, including nanodots, nanotubes, and nanocrystals [47][48][49] .…”

Solution Combustion Synthesis: Low‐Temperature Processing for p‐Type Cu:NiO Thin Films for Transparent Electronics

“…The final goal is to achieve the oxide electronics at low temperature considering the compatibility with flexible plastic substrates. The techniques toward this direction include deep‐UV photochemical activation, combustion synthesis, sol–gel on chip, carbon‐free aqueous approaches, and colloidal nanoparticle‐based methods . Among these techniques, solution combustion synthesis (SCS) has been regarded as a simple and time‐saving method for fabricating the nano‐oxides at temperature as low as 200–300 °C.…”

A facile one step conversion of the sub-micrometer to uniform nanopowder in tetragonal BaTiO3 via a surface active etching salt

“…A well-defined size and shape of BaTiO 3 nanoparticles could be obtained from the direct reaction of precursor ions through the hydrothermal method [9,10], while the solvothermal technique can produce more uniform nanoparticles, due to complex organic solvents preventing their agglomeration [11][12][13]. The sol-gel process shows outstanding control of a very small particle size (~10-50 nm) by using complex compound solution [14,15].…”